IP Library Granted Patent US 9,602,091
Granted Patent B1
US 9,602,091 · App. 14/958,809 · Granted Mar 21, 2017

Low phase shift, high frequency attenuator

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Quick Facts
Patent No.
US 9,602,091
App. No.
14/958,809
Granted
Mar 21, 2017
Kind
B1
Abstract

A wideband RF attenuator circuit that has a reduced impact on the phase of an applied signal when switched between an attenuation state and a non-attenuating reference or bypass state. A low phase shift attenuation at high RF frequencies can be achieved by utilizing a switched signal path attenuator topology with multiple distributed transmission line elements per signal path to provide broadband operation, distribute parasitic influences, and improve isolation to achieve higher attenuation at higher frequencies while still maintaining low phase shift operational characteristics. In an alternative embodiment, extension to even higher frequencies can be achieved by utilizing a quarter-wave transmission line element at the signal interfaces of each signal path, thereby improving insertion loss and power handling.

Claims (43)

1. A radio frequency attenuator circuit including:

(a) an In port and an Out port;

(b) a bypass path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, and first and second state switches respectively coupled between the plurality of distributed transmission line elements and the In and Out ports; and

(c) at least one attenuation path, each such attenuation path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, at least one attenuator element serially connected to the plurality of distributed transmission line elements, and first and second state switches respectively coupled between the plurality of distributed transmission line elements and the In and Out ports.

2. The radio frequency attenuator circuit of claim 1 , wherein one or more of the plurality of shunt switches comprises one or more serially-connected field effect transistors.

3. The radio frequency attenuator circuit of claim 1 , wherein at least one of the attenuator elements is centrally located within the plurality of distributed transmission line elements.

4. The radio frequency attenuator circuit of claim 1 , wherein at least one of the attenuator elements is a pi-type attenuator.

5. The radio frequency attenuator circuit of claim 1 , wherein at least one of the attenuator elements is a T-type attenuator.

6. The radio frequency attenuator circuit of claim 1 , wherein at least one of the attenuator elements is a bridged-T type attenuator.

7. The radio frequency attenuator circuit of claim 1 , wherein at least one of the attenuator elements is an L-pad type attenuator.

8. The radio frequency attenuator circuit of claim 1 , wherein the distributed transmission line elements comprise inductors.

9. The radio frequency attenuator circuit of claim 1 , wherein the first and second state switches are field effect transistors.

10. A radio frequency attenuator circuit including:

(a) an In port and an Out port;

(b) a bypass path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, and first and second quarter-wave transmission line elements respectively coupled between the plurality of distributed transmission line elements and the In and Out ports; and

(c) at least one attenuation path, each such attenuation path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, at least one attenuator element serially connected to the plurality of distributed transmission line elements, and first and second quarter-wave transmission line elements respectively coupled between the plurality of distributed transmission line elements and the In and Out ports.

11. The radio frequency attenuator circuit of claim 10 , wherein one or more of the plurality of shunt switches comprises one or more serially-connected field effect transistors.

12. The radio frequency attenuator circuit of claim 10 , wherein at least one of the attenuator elements is centrally located within the plurality of distributed transmission line elements.

13. The radio frequency attenuator circuit of claim 10 , wherein at least one of the attenuator elements is a pi-type attenuator.

14. The radio frequency attenuator circuit of claim 10 , wherein at least one of the attenuator elements is a T-type attenuator.

15. The radio frequency attenuator circuit of claim 10 , wherein at least one of the attenuator elements is a bridged-T type attenuator.

16. The radio frequency attenuator circuit of claim 10 , wherein at least one of the attenuator elements is an L-pad type attenuator.

17. The radio frequency attenuator circuit of claim 10 , wherein the distributed transmission line elements comprise inductors.

18. A radio frequency attenuator circuit including:

(a) an In port and an Out port;

(b) a bypass path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches each comprising one or more serially-connected field effect transistors coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, and first and second field effect transistors state switches respectively coupled between the plurality of distributed transmission line elements and the In and Out ports; and

(c) at least one attenuation path, each such attenuation path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches each comprising one or more serially-connected field effect transistors coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, at least one pi-type attenuator element serially connected to the plurality of distributed transmission line elements, and first and second field effect transistors state switches respectively coupled between the plurality of distributed transmission line elements and the In and Out ports.

19. A radio frequency attenuator circuit including:

(a) an In port and an Out port;

(b) a bypass path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches each comprising one or more serially-connected field effect transistors coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, and first and second quarter-wave transmission line elements respectively coupled between the plurality of distributed transmission line elements and the In and Out ports; and

(c) at least one attenuation path, each such attenuation path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches each comprising one or more serially-connected field effect transistors coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, at least one pi-type attenuator element serially connected to the plurality of distributed transmission line elements, and first and second quarter-wave transmission line elements respectively coupled between the plurality of distributed transmission line elements and the In and Out ports.

20. A digital step attenuator for selectably attenuating a radio frequency, including:

(a) at least two serially-connected radio frequency attenuator circuits as set forth in claim 1 ; and

(b) a selector circuit coupled to each of the at least two serially-connected radio frequency attenuator circuits for selectably enabling or disabling one or more of the at least two serially-connected radio frequency attenuator circuits.

21. A digital step attenuator for selectably attenuating a radio frequency, including:

(a) at least two serially-connected radio frequency attenuator circuits as set forth in claim 2 ; and

(b) a selector circuit coupled to each of the at least two serially-connected radio frequency attenuator circuits for selectably enabling or disabling one or more of the at least two serially-connected radio frequency attenuator circuits.

22. A method for attenuating a radio frequency, including:

(a) providing a circuit with an In port and an Out port;

(b) providing a bypass path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, and first and second switching elements respectively coupled between the plurality of distributed transmission line elements and the In and Out ports; and

(c) providing at least one attenuation path, each such attenuation path including a plurality of serially-connected distributed transmission line elements, a plurality of shunt switches coupled between a respective one of the plurality of distributed transmission line elements and a reference voltage, at least one attenuator element serially connected to the plurality of distributed transmission line elements, and first and second switching elements respectively coupled between the plurality of distributed transmission line elements and the In and Out ports.

23. The method of claim 22 , wherein the switching elements are field effect transistors.

24. The method of claim 22 , wherein the switching elements are quarter-wave transmission line elements.

Assignments (2)
CHANGE OF NAME Recorded Jan 24, 2018
From: PEREGRINE SEMICONDUCTOR CORPORATION
To: PSEMI CORPORATION
Reel/Frame 045749/0391 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 17, 2016
From: SHARMA, VIKAS
To: PEREGRINE SEMICONDUCTOR CORPORATION
Reel/Frame 037752/0864 →