Semiconductor device
View Patent ↗A semiconductor device including a semiconductor substrate and an electrode formed from an alloy containing aluminum, silicon and titanium. The silicon content in the electrode is from 0.5 to 1.0% by weight relative to the total weight of the electrode, the titanium content in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and the thickness of the electrode is at least 1 μm.
1. A semiconductor device comprising:
a semiconductor substrate, and
an electrode formed from an alloy containing aluminum, silicon and titanium, wherein
a content of the silicon in the electrode is from 0.5 to 1.0% by weight relative to a total weight of the electrode,
a content of the titanium in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and
a thickness of the electrode is at least 1 μm.
2. The semiconductor device according to claim 1 , wherein
an average particle size of metal crystals contained in the electrode is not more than 1 μm.
3. The semiconductor device according to claim 1 , wherein
an average particle size of metal crystals contained in the electrode is not more than 0.8 μm.
4. The semiconductor device according to claim 1 , wherein
the content of the titanium in the electrode is from 0.8 to 2.0% by weight relative to the total weight of the electrode.
5. The semiconductor device according to claim 2 , wherein
the content of the titanium in the electrode is from 0.8 to 2.0% by weight relative to the total weight of the electrode.
6. The semiconductor device according to claim 3 , wherein
the content of the titanium in the electrode is from 0.8 to 2.0% by weight relative to the total weight of the electrode.
7. The semiconductor device according to claim 1 , wherein
at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum.
8. The semiconductor device according to claim 2 , wherein
at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum.
9. The semiconductor device according to claim 3 , wherein
at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum.
10. The semiconductor device according to claim 4 , wherein
at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum.
11. The semiconductor device according to claim 5 , wherein
at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum.
12. The semiconductor device according to claim 6 , wherein
at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum.
13. The semiconductor device according to claim 1 , wherein
a content of the aluminum in the electrode is from 96.0 to 98.7% by weight relative to the total weight of the electrode.
14. The semiconductor device according to claim 1 , wherein
the thickness of the electrode is at least 1 μm and no more than 10 μm.
15. The semiconductor device according to claim 14 , wherein
the thickness of the electrode is at least 3 μm.
16. The semiconductor device according to claim 1 , wherein
the thickness of the electrode is at least 3 μm and no more than 8 μm.
17. The semiconductor device according to claim 1 , wherein
the thickness of the electrode is at least 4 μm and no more than 6 μm.
18. A semiconductor device comprising:
a semiconductor substrate, and
an electrode formed from an alloy containing aluminum, silicon and titanium, wherein
a content of the silicon in the electrode is from 0.5 to 1.0% by weight relative to a total weight of the electrode,
a content of the titanium in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode,
a content of the aluminum in the electrode is from 96.0 to 98.7% by weight relative to the total weight of the electrode, and
a thickness of the electrode is at least 1 μm and no more than 10 μm.
19. The semiconductor device according to claim 18 , wherein
the thickness of the electrode is at least 3 μm.