Shielded photonic integrated circuit
A light shield may be formed in photonic integrated circuit between integrated optical devices of the photonic integrated circuit. The light shield may be built by using materials already present in the photonic integrated circuit, for example the light shield may include metal walls and doped semiconductor regions. Light-emitting or light-sensitive integrated optical devices or modules of a photonic integrated circuit may be constructed with light shields integrally built in.
1. A photonic integrated circuit comprising:
a substrate;
first and second integrated optical devices over the substrate; and
a light shield structure between the first and second integrated optical devices, the light shield structure comprising an opaque structure configured to suppress optical crosstalk between the first and second integrated optical devices;
wherein the light shield structure comprises a Bragg structure for out-coupling stray light; and
wherein the Bragg structure comprises a plurality of concentric walls surrounding the first integrated optical device.
2. The photonic integrated circuit of claim 1 , wherein the light shield structure comprises a metal structure.
3. The photonic integrated circuit of claim 2 , wherein the metal structure is not coplanar with the first integrated optical device.
4. The photonic integrated circuit of claim 3 , wherein the metal structure is farther away from the substrate than the first integrated optical device.
5. The photonic integrated circuit of claim 2 , wherein the first integrated optical device comprises a photodetector.
6. The photonic integrated circuit of claim 1 , wherein the opaque structure comprises a semiconductor.
7. The photonic integrated circuit of claim 1 , wherein the opaque structure comprises an optically absorbing material.
8. The photonic integrated circuit of claim 1 , wherein the first or the second integrated optical device is bonded to the substrate.
9. The photonic integrated circuit of claim 1 , wherein the first or the second integrated optical device is monolithically fabricated on the substrate.
10. The photonic integrated circuit of claim 1 , wherein the first integrated optical device comprises a waveguide Y-junction.
11. The photonic integrated circuit of claim 1 , wherein the first integrated optical device comprises a light-emitting device.
12. The photonic integrated circuit of claim 11 , wherein the second integrated optical device comprises a receiver.
13. The photonic integrated circuit of claim 11 , wherein the light emitting device comprises a semiconductor laser or a semiconductor optical amplifier chip.
14. The photonic integrated circuit of claim 1 , wherein the substrate is selected from the group consisting of Si, GaAs, and InP.
15. The photonic integrated circuit of claim 1 , wherein the first or second optical device is comprised of a material selected from the group consisting of Si, SiO 2 , doped glass, SiON, SiN, InP, GaAs, AlGaAs, InGaAsP, InGaP, InAlAs, and InGaAlAs.