S-contact for SOI

1. A device comprising:

a high resistivity semiconductor substrate, the high resistivity based on a nominal doping of the semiconductor substrate;

an insulation layer overlying the substrate;

an active layer overlying the insulation layer and comprising active regions and isolation regions of the device;

a transistor formed in an isolated portion of the active layer, the transistor comprising a drain region, a source region and a gate channel region; and

a first conductive structure resistively connecting one of: a) a drain contact or a source contact, and b) a gate contact to the semiconductor substrate, the first conductive structure comprising:

a first conductive line connecting the one of a) and b) to a first conductive contact, the first conductive contact extending through the active layer at a region of the active layer outside the isolated portion of the active layer, and through the insulation layer to make direct contact with the semiconductor substrate at a region of the semiconductor substrate, said region having the nominal doping and being devoid of a doping different from the nominal doping,

wherein an effective contact resistance between the first conductive contact and the high resistivity semiconductor substrate is in a range of 0.2 to 20 G-ohm.

2. The device of claim 1 , wherein the first conductive contact extends through the active layer at an isolation region of the device.

3. The device of claim 2 , wherein the isolation region is a shallow trench isolation (STI) region.

4. The device of claim 1 , wherein the first conductive contact extends through the active layer at an active region of the device.

5. The device of claim 1 , wherein the first conductive structure resistively connects the drain contact to the semiconductor substrate.

6. The device of claim 1 , wherein the first conductive structure resistively connects the source contact to the semiconductor substrate.

7. The device of claim 1 , wherein the first conductive structure resistively connects the gate contact to the semiconductor substrate.

8. The device of claim 1 , wherein the drain contact, the source contact, the first conductive line, the second conductive line and the first conductive contact comprise one of: a) tungsten, b) copper, c) polysilicon, and d) a metal.

9. The device of claim 1 , further comprising a second conductive structure that resistively connects the other of the one of a) and b) to the semiconductor substrate.

10. The device of claim 9 , wherein the second conductive structure comprises:

a second conductive line connecting the other of the one of a) and b) to a second conductive contact, the second conductive contact being resistively coupled to the semiconductor substrate.

11. The device of claim 10 , wherein the second conductive contact extends through the active layer at a region of the active layer outside the isolated portion of the active layer, and through the insulation layer to make direct contact with the semiconductor substrate.

12. The device of claim 11 , wherein the second conductive contact extends through the active layer at an isolation region of the device.

13. The device of claim 11 , wherein the second conductive contact extends through the active layer at an active region of the device.

14. The device of claim 10 , wherein the second conductive contact is resistively coupled to an active region outside the isolated portion of the active layer.

15. The device of claim 14 , wherein the active region outside the isolated portion of the active layer is an active region of a second transistor.

16. The device of claim 15 , wherein the active region of the second transistor is resistively coupled to the semiconductor substrate via a conductive structure similar to the first conductive structure, wherein a conductive contact of the conductive structure extends through the active layer and through the insulation layer to make direct contact with the semiconductor substrate.

17. The device of claim 1 , wherein a resistivity value of the high resistivity substrate is in a range of 3,000 to 20,000 ohm-cm.

18. The device of claim 1 , wherein a resistivity value of the high resistivity substrate is greater than 3,000 ohm-cm.

19. The device of claim 9 , further comprising one or more additional first conductive structures and/or one or more additional second conductive structures.

20. The device of claim 19 , wherein a number of the one or more additional first conductive structures is based on a desired equivalent resistance between the first conductive structures and the bottom surface of the semiconductor substrate away from the insulation layer.

21. The device of claim 19 , wherein a number of the one or more additional second conductive structures is based on a desired equivalent resistance between the second conductive structures and the bottom surface of the semiconductor substrate away from the insulation layer.

22. The device of claim 19 , wherein an increase of the number of the one or more additional conductive structures reduces an equivalent resistance, through the semiconductor substrate, between the conductive structures and a bottom surface of the semiconductor substrate away from the insulation layer.

23. The device of claim 19 , wherein a relative position of the first conductive structures with respect to the second conductive structures is based on a desired equivalent resistance, through the semiconductor substrate, between the first conductive structures and the second conductive structures.

24. The device of claim 1 , wherein the transistor is an N-type metal-oxide-semiconductor field effect transistor (NMOSFET).

25. The device of claim 1 , wherein the transistor is a P-type metal-oxide-semiconductor field effect transistor (PMOSFET).