Junction barrier Schottky rectifier
View Patent ↗A junction barrier Schottky rectifier with first and second drift layer sections, wherein a peak net doping concentration of the first section is at least two times lower than a minimum net doping concentration of the second section. For each emitter region the first section includes a layer which is in contact with the respective emitter region to form a pn-junction between the first section and the respective emitter region, wherein the thickness of this layer in a direction perpendicular to the interface between the first section and the respective emitter region is at least 0.1 μm. The JBS rectifier has a transition from unipolar to bipolar conduction mode at a lower forward bias due to lowering of electrostatic forces otherwise impairing the transport of electrons toward the emitter regions under forward bias conditions, and with reduced snap-back phenomenon.
1. A junction barrier Schottky rectifier comprising:
a substrate layer having a first conductivity type;
a drift layer having the first conductivity type, wherein the drift layer is on the substrate layer and has a lower peak net doping concentration than the substrate layer;
a plurality of emitter regions in the drift layer adjacent to a first main side of the junction barrier Schottky rectifier, each emitter region having a second conductivity type different from the first conductivity type;
a first metal contact layer forming a Schottky contact with the drift layer and an ohmic contact with each one of the emitter regions on the first main side of the junction barrier Schottky rectifier; and
a second metal contact layer forming an ohmic contact with the substrate layer on a second main side of the junction barrier Schottky rectifier opposite to the first main side,
wherein the drift layer includes a first drift layer section and a second drift layer section, wherein a peak net doping concentration of the first drift layer section is at least two times lower than a minimum net doping concentration of the second drift layer section, and
for each emitter region the first drift layer section includes a layer section which is in contact with the respective emitter region to form a pn-junction between the first drift layer section and the respective emitter region, wherein the thickness of this layer section in a direction perpendicular to the interface between the first drift layer section and the respective emitter region is at least 0.1 μm, wherein
each one of the emitter regions comprises a first emitter section and a second emitter section, wherein a peak net doping concentration of the second emitter region is at least two times higher than a peak net doping concentration of the first emitter section, and
in each emitter region the second emitter section extends to the second drift layer section, while the first emitter section is separated from the second drift layer section by the first drift layer section.
2. The junction barrier Schottky rectifier according to claim 1 , wherein the first drift layer section forms the Schottky contact with the first metal contact layer and separates the first metal contact layer from the second drift layer section.
3. The junction barrier Schottky rectifier according to claim 1 , wherein the first metal contact layer extends into a groove or hole formed in each one of the emitter regions.
4. The junction barrier Schottky rectifier according to claim 1 , wherein a lateral side of the first emitter section in each emitter region is covered by the second emitter section.
5. The junction barrier Schottky rectifier according to claim 4 , wherein in each emitter region the second emitter section is separated from the first metal contact layer by an oxide layer formed on the second emitter section.
6. The junction barrier Schottky rectifier according to claim 1 , wherein the net doping concentration in the drift layer is 1·10 17 cm −3 or less, or 5·10 16 cm −3 or less, or 1·10 16 cm −3 or less.
7. The junction barrier Schottky rectifier according to claim 1 , wherein the net doping concentration increases from the net doping concentration in the first drift layer section to the net doping concentration in the second drift layer section in a thin transition region connecting the first drift layer section and the second drift layer section with a steep gradient of at least 20·n max (1)/μm, or of at least 40·n max (1)/μm, wherein n max (1) is the peak doping concentration in the first drift layer section.
8. The junction barrier Schottky rectifier according to claim 1 , the depth of the drift layer from the interface with the first metal contact layer in a direction from the first main side towards the second main side of the Junction barrier Schottky rectifier is in a range between 5 μm and 500 μm, or in a range between 5 μm and 100 μm, or in a range between 5 μm and 40 μm.
9. The junction barrier Schottky rectifier according to claim 1 , wherein the peak net doping concentration in the first drift layer section is 1·10 16 cm −3 or below, or 5·10 15 cm −3 or below, or 1·10 15 cm −3 or below.
10. The junction barrier Schottky rectifier according to claim 1 , wherein the net doping concentration in the first drift layer section and in the second drift layer section is substantially constant, respectively, and the doping concentration profile at the boundary between the first drift layer section and the second drift layer section is step-like.
11. The junction barrier Schottky rectifier according to claim 2 , wherein the first metal contact layer extends into a groove or hole formed in each one of the emitter regions.
12. The junction barrier Schottky rectifier according to claim 2 , wherein a lateral side of the first emitter section in each emitter region is covered by the second emitter section.
13. The junction barrier Schottky rectifier according to claim 12 , wherein in each emitter region the second emitter section is separated from the first metal contact layer by an oxide layer formed on the second emitter section.
14. The junction barrier Schottky rectifier according to claim 2 , wherein the net doping concentration in the drift layer is 1·10 17 cm −3 or less, or 5·10 16 cm −3 or less, or 1·10 16 cm −3 or less.
15. The junction barrier Schottky rectifier according to claim 2 , wherein the net doping concentration increases from the net doping concentration in the first drift layer section to the net doping concentration in the second drift layer section in a thin transition region connecting the first drift layer section and the second drift layer section with a steep gradient of at least 20·n max (1)/μm, or of at least 40·n max (1)/μm, wherein n max (1) is the peak doping concentration in the first drift layer section.
16. The junction barrier Schottky rectifier according to claim 2 , the depth of the drift layer from the interface with the first metal contact layer in a direction from the first main side towards the second main side of the Junction barrier Schottky rectifier is in a range between 5 μm and 500 μm, or in a range between 5 μm and 100 μm, or in a range between 5 μm and 40 μm.
17. The junction barrier Schottky rectifier according to claim 2 , wherein the peak net doping concentration in the first drift layer section is 1·10 16 cm −3 or below, or 5·10 15 cm −3 or below, or 1·10 15 cm −3 or below.
18. The junction barrier Schottky rectifier according to claim 2 , wherein the net doping concentration in the first drift layer section and in the second drift layer section is substantially constant, respectively, and the doping concentration profile at the boundary between the first drift layer section and the second drift layer section is step-like.