Method of using laser welding to ohmic contact of metallic thermal and diffusion barrier layer for foil-based metallization of solar cells
View Patent ↗Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.
1. A method of fabricating a solar cell, the method comprising:
forming a plurality of semiconductor regions in or above a substrate;
forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions;
forming a metal seed layer on the metal-containing thermal and diffusion barrier layer;
forming a metal conductor layer on the metal seed layer; and
laser welding the metal conductor layer to the metal seed layer, wherein the metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding,
wherein forming the metal-containing thermal and diffusion barrier layer comprises forming a layer of material selected from the group consisting of a layer of titanium nitride (TiN), a layer of titanium tungsten (TiW), and a layer of tantalum nitride (TaN).
2. A method of fabricating a solar cell, the method comprising:
forming a plurality of alternating N-type and P-type polycrystalline silicon regions on a thin dielectric layer formed on a single crystalline silicon substrate;
forming a non-aluminum metal-containing layer above the alternating N-type and P-type polycrystalline silicon regions;
forming an aluminum seed layer on the non-aluminum metal-containing layer;
forming an aluminum foil on the aluminum seed layer; and
laser welding the aluminum foil to the aluminum seed layer, wherein the non-aluminum metal-containing layer protects the alternating N-type and P-type polycrystalline silicon regions during the laser welding,
prior to forming the non-aluminum metal-containing layer, forming a thin aluminum layer on the alternating N-type and P-type polycrystalline silicon regions, wherein the non-aluminum metal-containing layer is formed on the thin aluminum layer.
3. The method of claim 2 , wherein forming the reflectance layer comprises forming a layer of aluminum having a thickness approximately in the range of 20-100 nanometers.
4. The method of claim 2 , wherein forming the plurality of semiconductor regions comprises forming a plurality of silicon regions above the substrate, and wherein forming the reflectance layer comprises forming a layer of aluminum having an amount of aluminum less than required to form a eutectic mixture with the plurality of silicon regions.
5. The method of claim 1 , wherein forming the metal conductor layer on the metal seed layer comprises forming a metal foil on the metal seed layer.
6. The method of claim 5 , further comprising:
subsequent to laser welding the metal foil to the metal seed layer, patterning the metal foil.
7. The method of claim 5 , further comprising:
prior to laser welding the metal foil to the metal seed layer, patterning the metal foil.
8. The method of claim 5 , wherein patterning the metal foil comprises:
laser ablating through only a portion of the metal foil at regions in alignment with locations between the plurality of semiconductor regions; and
subsequent to the laser ablating, etching the remaining metal foil to isolate regions of remaining metal foil in alignment with the plurality of semiconductor regions.
9. The method of claim 5 , wherein patterning the metal foil comprises:
laser ablating through only a portion of the metal foil at regions in alignment with locations between the plurality of semiconductor regions; and
subsequent to the laser ablating, anodizing the metal foil to isolate regions of remaining metal foil in alignment with the plurality of semiconductor regions.
10. The method of claim 5 , wherein the metal seed layer and the metal-containing thermal and diffusion barrier layer are not patterned prior to forming the metal conductor layer on the metal seed layer, the method further comprising:
patterning the metal seed layer and the metal-containing thermal and diffusion barrier layer at substantially the same time as patterning the metal foil.
11. The method of claim 1 , wherein the metal seed layer and the metal-containing thermal and diffusion barrier layer are patterned prior to forming the metal conductor layer on the metal seed layer.
12. The method of claim 1 , wherein forming the metal conductor layer on the metal seed layer comprises forming a metal wire on the metal seed layer.
13. The method of claim 1 , wherein forming the plurality of semiconductor regions comprises forming the plurality of semiconductor regions from a polycrystalline silicon layer formed above the substrate, the method further comprising:
forming a trench between each of the plurality of semiconductor regions and extending partially into the substrate.
14. The method of claim 1 , wherein the substrate is a single crystalline silicon substrate, and wherein forming the plurality of semiconductor regions comprises forming the plurality of semiconductor regions in the single crystalline silicon substrate.
15. The method of claim 1 , wherein forming the forming the metal seed layer comprises forming a layer having a thickness approximately in the range of 0.05 to 20 microns and comprising aluminum in an amount greater than approximately 90 atomic %, and wherein the metal conductor layer comprises aluminum.
16. The method of claim 1 , wherein forming the metal-containing thermal and diffusion barrier layer comprises forming a layer of material by chemical vapor deposition or physical vapor deposition, and to a thickness approximately in the range of 30-500 nanometers.
17. The method of claim 1 , wherein forming the plurality of semiconductor regions comprises forming a plurality of alternating N-type and P-type semiconductor regions.
18. A method of fabricating a solar cell, the method comprising:
forming a plurality of alternating N-type and P-type polycrystalline silicon regions on a thin dielectric layer formed on a single crystalline silicon substrate;
forming a non-aluminum metal-containing layer above the alternating N-type and P-type polycrystalline silicon regions;
forming an aluminum seed layer on the non-aluminum metal-containing layer;
forming an aluminum foil on the aluminum seed layer; and
laser welding the aluminum foil to the aluminum seed layer, wherein the non-aluminum metal-containing layer protects the alternating N-type and P-type polycrystalline silicon regions during the laser welding.