Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers and the resulting solar cells
View Patent ↗Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers, and the resulting solar cells, are described. In an example, a back contact solar cell includes a maximum concentration of the approximately Gaussian distribution of P-type dopants approximately in the center of each of segmented P-type emitter regions between first and second sides of each of the segmented P-type emitter regions.
1. A back contact solar cell, comprising:
an N-type single crystalline silicon substrate having a light-receiving surface and a back surface;
alternating continuous N-type emitter regions and segmented P-type emitter regions disposed on the back surface of the N-type single crystalline silicon substrate, with gaps between segments of the segmented P-type emitter regions;
trenches in the N-type single crystalline silicon substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions;
an approximately Gaussian distribution of P-type dopants in the N-type single crystalline silicon substrate below each of the segmented P-type emitter regions, wherein a maximum concentration of the approximately Gaussian distribution of P-type dopants is approximately in the center of each of the segmented P-type emitter regions between first and second sides of each of the segmented P-type emitter regions;
substantially vertical P/N junctions in the N-type single crystalline silicon substrate at the trenches formed in locations of the gaps between segments of the segmented P-type emitter regions; and
oxide layers coextensive with each continuous N-type emitter region and each segment of the segmented P-type emitter regions, each oxide layer between the back surface of the N-type single crystalline substrate and the corresponding N-type emitter region or corresponding segment of the segmented P-type emitter regions.
2. The back contact solar cell of claim 1 , wherein the trenches in the N-type single crystalline silicon substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions are texturized trenches.
3. The back contact solar cell of claim 1 , wherein the P-type dopants comprise boron.
4. The back contact solar cell of claim 1 , wherein the continuous N-type emitter regions comprise phosphorous.
5. The back contact solar cell of claim 1 , wherein the continuous N-type emitter regions comprise arsenic.
6. A solar cell, comprising:
alternating continuous N-type emitter regions and segmented P-type emitter regions disposed on a surface of a substrate, with gaps between segments of the segmented P-type emitter regions;
trenches in the substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions;
an approximately Gaussian distribution of P-type dopants in the substrate below each of the segmented P-type emitter regions, wherein a maximum concentration of the approximately Gaussian distribution of P-type dopants is approximately in the center of each of the segmented P-type emitter regions between first and second sides of each of the segmented P-type emitter regions; and
oxide layers coextensive with each continuous N-type emitter region and each segment of the segmented P-type emitter regions, each oxide layer between the surface of the substrate and the corresponding N-type emitter region or corresponding segment of the segmented P-type emitter regions.
7. The solar cell of claim 6 , wherein the trenches in the substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions are texturized trenches.
8. The solar cell of claim 6 , further comprising:
substantially vertical P/N junctions in the substrate at the trenches formed in locations of the gaps between segments of the segmented P-type emitter regions.
9. The solar cell of claim 6 , wherein the P-type dopants comprise boron.
10. The solar cell of claim 6 , wherein the continuous N-type emitter regions comprise phosphorous.
11. The back contact solar cell of claim 6 , wherein the continuous N-type emitter regions comprise arsenic.
12. The solar cell of claim 6 , wherein the substrate comprises silicon.
13. The solar cell of claim 12 , wherein the substrate is a monocrystalline silicon substrate.
14. A solar cell, comprising:
alternating continuous P-type emitter regions and segmented N-type emitter regions disposed on a surface of a substrate, with gaps between segments of the segmented N-type emitter regions;
trenches in the substrate between the alternating continuous P-type emitter regions and segmented N-type emitter regions and in locations of the gaps between segments of the segmented N-type emitter regions;
an approximately Gaussian distribution of N-type dopants in the substrate below each of the segmented N-type emitter regions, wherein a maximum concentration of the approximately Gaussian distribution of N-type dopants is approximately in the center of each of the segmented N-type emitter regions between first and second sides of each of the segmented N-type emitter regions; and
oxide layers coextensive with each continuous P-type emitter region and each segment of the segmented N-type emitter regions, each oxide layer between the surface of the substrate and the corresponding P-type emitter region or corresponding segment of the segmented N-type emitter regions.
15. The solar cell of claim 14 , wherein the trenches in the substrate between the alternating continuous P-type emitter regions and segmented N-type emitter regions and in locations of the gaps between segments of the segmented N-type emitter regions are texturized trenches.
16. The solar cell of claim 14 , further comprising:
substantially vertical P/N junctions in the substrate at the trenches formed in locations of the gaps between segments of the segmented N-type emitter regions.
17. The solar cell of claim 14 , wherein the N-type dopants comprise phosphorous.
18. The solar cell of claim 14 , wherein the N-type dopants comprise arsenic.
19. The solar cell of claim 14 , wherein the continuous P-type emitter regions comprise boron.
20. The solar cell of claim 14 , wherein the substrate comprises silicon.
21. The solar cell of claim 20 , wherein the substrate is a monocrystalline silicon substrate.