Storage device and storage method

1. A storage device comprising:

a plurality of nonvolatile semiconductor memories;

a sensor configured to measure a temperature of the nonvolatile semiconductor memories; and

a controller configured to determine a rewriting interval of data to be written to the nonvolatile semiconductor memories, and write the data to, of the nonvolatile semiconductor memories, a nonvolatile semiconductor memory having a temperature corresponding to the rewriting interval.

2. The storage device of claim 1 , wherein

the controller is further configured to write the data to a nonvolatile semiconductor memory having a temperature higher than a predetermined temperature when the rewriting interval is shorter than a predetermined interval, and write the data to a nonvolatile semiconductor memory having a temperature which is not higher than the predetermined temperature when the rewriting interval is not shorter than the predetermined interval.

3. The storage device of claim 1 , wherein

the controller is further configured to read the rewriting interval included in management information of data received from the host in a multi-stream format.

4. The storage device of claim 1 , wherein

the controller is further configured to determine the rewriting interval, according to a type of the data.

5. The storage device of claim 1 , wherein

each of the nonvolatile semiconductor memories comprises a plurality of blocks, and data is configured to be erased in block units,

the controller is further configured to manage a refresh time limit for each block of the nonvolatile semiconductor memories and perform a refresh process at the refresh time limit of a first block of a first nonvolatile semiconductor memory, and

the refresh process comprises reading data from the first block of the first nonvolatile semiconductor memory, and writing the read data to a second block of the first nonvolatile semiconductor memory or a block of another nonvolatile semiconductor memory in accordance with the rewriting interval of the data.

6. The storage device of claim 5 , wherein

the controller is further configured to determine a block to which data is to be written such that the number of refreshes is equalized in the blocks.

7. The storage device of claim 1 , wherein

each of the nonvolatile semiconductor memories comprises a plurality of blocks, and data is configured to be erased in block units, and

the controller is further configured to, when a rewrite command of a first block of a first nonvolatile semiconductor memory is received from the host, read data from, the first block of the first nonvolatile semiconductor memory, write the read data to a second block of the first nonvolatile semiconductor memory or a block of another nonvolatile semiconductor memory in accordance with a rewriting interval of the data, and erase the data of the first block of the first nonvolatile semiconductor memory.

8. The storage device of claim 7 , wherein

the controller is further configured to determine a block to which data is to be written sues that the number of rewrites is equalized in the block.

9. A storage method comprising:

measuring a temperature of a plurality of nonvolatile semiconductor memories;

determining a rewriting interval of data received from a host; and

writing the data to, of the nonvolatile semiconductor memories, a nonvolatile semiconductor memory having a temperature corresponding to the rewriting interval.

10. The storage method or claim 9 , wherein

the writing comprises writing the data to a nonvolatile semiconductor memory having a temperature higher than a predetermined temperature when the rewriting interval is shorter than a predetermined interval, and writing the data to a nonvolatile semiconductor memory having a temperature which is nor higher than the predetermined temperature when the rewriting interval is not shorter than the predetermined interval.

11. The storage method of claim 9 , wherein

the determining comprises reading the rewriting interval included in management information of data received from the host in a multi-stream format.

12. The storage method of claim 9 , wherein

the determining comprises determining the rewriting interval according to a type of the data.

13. The storage method of claim 9 , wherein

each of the nonvolatile semiconductor memories comprises a plurality of blocks, and data is configured to be erased in block units, and

the storage method further comprises;

managing a refresh time limit for each block of the nonvolatile semiconductor memories; and

performing a refresh process at the refresh time limit of a first block of a first nonvolatile semiconductor memory, wherein

the refresh process comprises reading data from the first block of the first nonvolatile semiconductor memory, and writing the read data to a second block of the first nonvolatile semiconductor memory or a block of another nonvolatile semiconductor memory in accordance with the rewriting interval of the data.

14. The storage method of claim 13 , wherein

the refresh process comprises determining a block to which data is to be written such that the number of refreshes is equalized in the blocks.

15. The storage method of claim 9 , wherein

each of the nonvolatile semiconductor memories comprises a plurality of blocks, and data is configured to be erased in block units, and

the storage method comprises:

receiving a rewrite command of a first block of a first nonvolatile semiconductor memory from the host;

reading data from the first block of the first nonvolatile: semiconductor memory;

writing the read data to a second block of the first nonvolatile semiconductor memory or a block of another nonvolatile semiconductor memory in accordance with the rewriting interval of the data; and

erasing the data of the first block of the first nonvolatile semiconductor memory.

16. The storage method of claim 15 , further comprising:

determining a block to which data is to be written such that the number of rewrites is equalized in the blocks.

17. A storage device comprising:

a plurality of nonvolatile semiconductor memories;

a sensor configured to measure a temperature of the nonvolatile semiconductor memories;

a host configured to access the nonvolatile semiconductor memories; and

a controller connected between the nonvolatile semiconductor memories and the host, wherein

the controller is configured to

obtain a rewriting interval of data to be written to the nonvolatile semiconductor memories,

write the data to a nonvolatile semiconductor memory having a temperature higher than a predetermined temperature when the rewriting interval is shorter than a predetermined interval, and write the data to a nonvolatile semiconductor memory having a temperature which is not higher than the predetermined temperature when the rewriting interval is not shorter than the predetermined interval, and

apply a refresh process to the nonvolatile semiconductor memories in intervals corresponding to temperatures of the nonvolatile semiconductor memories,

wherein the refresh process comprises:

reading data from a first clock of a first nonvolatile semiconductor memory, and

writing the read data to a second block of the first nonvolatile semiconductor memory or a block of another nonvolatile semiconductor memory in accordance with the rewriting interval of the data.

18. The storage device of claim 17 , wherein

the controller is further configured to read the rewriting interval included in management information of data received, from the host in a multi-stream format.

19. The storage device of claim 17 , wherein

the controller is further configured to determine the rewriting interval according to a type of the data.

20. The storage device of claim 17 , wherein

the controller is further configured to determine a block to which data is to be written such that the number of writes and the number of refreshes are equalized in the blocks.