Electronic devices comprising n-type and p-type superlattices

1. An electronic device comprising:

a n-type superlattice providing n-type conductivity; and

a p-type superlattice providing p-type conductivity;

the n-type superlattice comprising alternating host layers and donor impurity layers, wherein:

the host layers consist essentially of a group III metal nitride semiconductor material; and

the donor impurity layers consist of a monolayer of corresponding donor atoms;

the p-type superlattice comprising alternating host layers and acceptor impurity layers, wherein:

the host layers consist essentially of the group III metal nitride semiconductor material; and

the acceptor impurity layers consist of a monolayer of corresponding acceptor atoms; and

wherein the group III metal nitride semiconductor material of the host layers of the n-type superlattice are the same as the group III metal nitride semiconductor material of the host layers of the p-type superlattice.

2. The electronic device of claim 1 wherein the electronic device is an ultraviolet light emitting diode or an ultraviolet light detector.

3. The electronic device of claim 1 wherein the n-type superlattice and the p-type superlattice form a PN junction.

4. The electronic device of claim 1 further comprising an intrinsic region comprised of one or more group III metal nitride semiconductor materials between the n-type superlattice and the p-type superlattice to form a PIN junction.

5. The electronic device of claim 4 wherein the intrinsic region has a bandgap that varies along a growth direction.

6. The electronic device of claim 4 wherein the intrinsic region consists essentially of one of the following:

a pure group III metal nitride semiconductor material;

a group III metal nitride semiconductor material including at least one crystal structure modifier, wherein the crystal structure modifier is selected from at least one of hydrogen, oxygen, carbon, rare-earth or lanthanide metal; and

a not-intentionally doped group III metal nitride semiconductor material.

7. The electronic device of claim 4 wherein a period or a duty cycle of the p-type superlattice or the n-type superlattice is such that the p-type superlattice or the n-type superlattice is transparent to a photon emission wavelength or a photon absorption wavelength of the intrinsic region.

8. The electronic device of claim 1 wherein the group III metal in the group III metal nitride semiconductor material comprises at least about 50% Al by mol.

9. The electronic device of claim 1 wherein the group III metal nitride semiconductor material is selected from at least one of:

aluminium nitride (AlN);

aluminium gallium nitride (Al x Ga 1-x N) where 0<x<1;

aluminium indium nitride (Al x In 1-x N) where 0<x<1; and

aluminium gallium indium nitride (Al x Ga y In 1-x-y N) where 0<x<1, 0<y<1 and x+y<1.

10. The electronic device of claim 1 wherein the donor atoms are silicon (Si).

11. The electronic device of claim 1 wherein the donor atoms are germanium (Ge).

12. The electronic device of claim 1 wherein the acceptor atoms are magnesium (Mg).

13. The electronic device of claim 1 wherein the acceptor atoms are selected from at least one of:

zinc (Zn); and

carbon (C).

14. The electronic device of claim 1 wherein each host layer has a thickness of between about 1 nm and about 25 nm.

15. The electronic device of claim 1 wherein an average spacing between the donor atoms or the acceptor atoms in the plane of each donor impurity layer or acceptor impurity layer is less than 1 nm.

16. The electronic device of claim 1 wherein an average spacing between the donor atoms or the acceptor atoms in the plane of each donor impurity layer or acceptor impurity layer is around 0.1 nm.

17. The electronic device of claim 1 further comprising a buffer region adjacent the n-type superlattice, the buffer region consisting essentially of AlN and/or GaN, and the buffer region having a thickness between 100 nm and 500 nm.

18. The electronic device of claim 1 further comprising a buffer region adjacent the n-type superlattice, wherein the buffer region comprises a superlattice comprising alternating layers of AlN and GaN with a bulk composition equivalent to the group III metal nitride semiconductor material.

19. The electronic device of claim 1 further comprising:

a substrate; and

a buffer region between the n-type superlattice or the p-type superlattice and the substrate.

20. The electronic device of claim 1 wherein the n-type superlattice or the p-type superlattice is tensile strained or compressively strained.

21. The electronic device of claim 1 wherein the n-type superlattice or the p-type superlattice has an electron wavefunction and a hole wavefunction, and peaks of the electron wavefunction are not spatially aligned with peaks of the hole wavefunction.

22. The electronic device of claim 1 wherein the p-type superlattice and the n-type superlattice each comprise at least 10 host layers and at least 10 donor impurity layers or acceptor impurity layers.

23. The electronic device of claim 1 wherein a period of the p-type superlattice and a period of the n-type superlattice are uniform.

24. The electronic device of claim 1 wherein a period of the p-type superlattice or a period of the n-type superlattice is non-uniform.

25. A superlattice providing p-type or n-type conductivity, the superlattice comprising alternating host layers and impurity layers, wherein:

the host layers consist essentially of a semiconductor material; and

the impurity layers consist of a monolayer of corresponding donor or acceptor atoms.

26. The superlattice of claim 25 wherein the donor atoms or the acceptor atoms consist of one of the atomic species in the Lanthanide series of the periodic table of elements.

27. The superlattice of claim 25 wherein the donor atoms or the acceptor atoms consist of gadolinium (Gd).

28. The superlattice of claim 25 wherein the host layers have a similar thickness to one another or the impurity layers have a similar thickness to one another.

29. The superlattice of claim 25 wherein subsequent host layers have a substantially different thickness or subsequent impurity layers have a substantially different thickness.

30. The superlattice of claim 25 wherein the impurity layers each form a hexagonal crystal mesh and the host layers have a wurtzite crystal structure.

31. The superlattice of claim 30 wherein the semiconductor material is silicene or graphene.

32. The superlattice of claim 25 wherein subsequent impurity layers are separated by a distance such that the electron or hole wavefunctions in the electronic potential wells induced by the atoms of the donor material or acceptor material spatially overlap.

33. The superlattice of claim 25 wherein the impurity layers alternate in series between donor impurity layers and acceptor impurity layers.