Microelectromechanical system device with internal direct electric coupling

1. A microelectromechanical system (MEMS) device comprising:

a MEMS substrate comprising:

a first semiconductor layer with a first portion and a second portion, a second semiconductor layer and a dielectric layer between the first semiconductor layer and the second semiconductor layer, wherein MEMS structures are formed from the second semiconductor layer, and wherein the MEMS structures comprise one or more first conductive pads;

a base substrate having one or more second conductive pads on the base substrate, wherein the one or more second conductive pads are connected to the one or more first conductive pads; and

a conductive connector formed through the dielectric layer of the MEMS substrate to provide electrical coupling between the first semiconductor layer and the second semiconductor layer, wherein the base substrate is electrically connected to the second semiconductor layer and the first portion of the first semiconductor layer.

2. The MEMS device of claim 1 , wherein the first portion and the second portion are electrically isolated from another.

3. The MEMS device of claim 1 , wherein the first semiconductor layer has an opening to expose the MEMS structures to the environment.

4. The MEMS device of claim 1 , further comprising electrodes on the MEMS structures, wherein the electrodes and the base substrate sense displacement of the MEMS structures.

5. The MEMS device of claim 1 , wherein the MEMS device comprises a pressure sensor.

6. The MEMS device of claim 1 , wherein the conductive connector comprises at least one of polysilicon, tungsten, titanium, titanium nitride, aluminum or germanium.

7. A method comprising:

providing a microelectromechanical system (MEMS) substrate, wherein the providing comprises:

forming one or more cavities in a first semiconductor layer;

forming a second semiconductor layer;

providing a dielectric layer between the first semiconductor layer and the second semiconductor layer;

bonding the first semiconductor layer to the second semiconductor layer;

etching at least one via through the second semiconductor layer and the dielectric layer;

depositing a first conductive material onto the second semiconductor layer and filling the at least one via;

depositing a second conductive material on the first conductive material;

patterning and etching the second conductive material and the first conductive material to form at least one stand-off;

defining one or more MEMS structures by patterning and etching the second semiconductor layer;

creating an opening to separate the first semiconductor layer into a first portion and a second portion, wherein the creating is performed by etching the first semiconductor layer; and

bonding the MEMS substrate to a base substrate using a eutectic bond between the second conductive material and metal pads of the base substrate.

8. The method of claim 7 , wherein the bonding comprises fusion bonding.

9. The method of claim 7 , wherein the second conductive material comprises germanium.

10. The method of claim 7 , wherein the etching the at least one via further comprises partially etching into the first semiconductor layer.

11. The method of claim 9 , wherein the metal pads comprise aluminum pads.

12. The method of claim 7 , wherein the forming the standoff comprises partially etching into the second semiconductor layer.

13. The method of claim 7 , wherein the first portion and the second portion are electrically isolated from one another.

14. The method of claim 7 , wherein the opening exposes the one or more MEMS structures to the environment.