Substrate planarizing method and dropping amount calculating method

1. A substrate planarizing method comprising:

dropping, from above a substrate with topography, resist whose amount is determined in accordance with a volume of a concave portion according to the topography of the substrate;

moving a blank template with a flat pressing plane or the substrate so that a distance between the blank template and the substrate becomes a predetermined distance, the pressing plane of the blank template having a size more than or equal to a region including a plurality of shots of the substrate;

pressing the pressing plane of the blank template against the resist, the pressing plane being pressed against the plurality of shots in one pressing process;

curing the resist;

releasing the blank template from the resist; and

etching the substrate entirely from above the resist, etching selectivity between the resist and a film to be etched on the substrate in the entire etching being 1.5 or less, wherein

an amount of resist to be dropped on the substrate is adjusted for each of the shots of the substrate, the amount of resist being calculated on the basis of the volume of the concave portion and a volume of upper side resist to be disposed above a convex and concave portion according to the topography, the volume of the upper side resist being calculated on the basis of an area of the pressing plane and a thickness of the upper side resist, and,

a position where the resist is dropped is set in accordance with a position of the convex and concave portion according to the topography, and

at least two kinds of resist dropping densities per unit area are set on the shot.

2. The substrate planarizing method according to claim 1 , wherein,

in the entire etching of the substrate,

the resist is etched back until a part of a surface of the substrate is exposed so that the resist is embedded in only the concave portion of the substrate, and

the resist is etched back further so that the resist is entirely removed.

3. A substrate planarizing method comprising:

dropping, from above a substrate with topography, resist whose amount is determined in accordance with volume of a concave portion according to the topography of the substrate,

moving a blank template with a flat pressing plane or the substrate so that a distance between the blank template and the substrate becomes a predetermined distance;

pressing the pressing plane of the blank template against the resist;

curing the resist;

releasing the blank template from the resist; and

etching the substrate entirely from above the resist, etching selectivity between the resist and a film to be etched on the substrate in the entire etching being 1.5 or less, wherein

the pressing plane of the blank template has a size more than or equal to a region including a plurality of shots of the substrate,

the pressing plane is pressed against the plurality of shots in one pressing process,

an amount of resist to be dropped on the substrate is calculated on the basis of the volume of the concave portion and a volume of upper side resist to be disposed above a convex and concave portion according to the topography, the volume of the upper side resist being calculated on the basis of an area of the pressing plane and a thickness of the upper side resist, and,

a position where the resist is dropped is set in accordance with a position of the convex and concave portion according to the topography, and

at least two kinds of resist dropping densities per unit area are set on the shot.

4. The substrate planarizing method according to claim 3 , wherein,

in the entire etching of the substrate,

the resist is etched back until a part of a surface of the substrate is exposed so that the resist is embedded in only the concave portion of the substrate, and

the resist is etched back further so that the resist is entirely removed.