Low capacitance surge suppression device
A surge suppression device includes a micro electromechanical system (MEMS) switch electrically connected to a current path. Additionally, the surge suppression device includes a transient voltage suppression (TVS) device electrically connected in series to the MEMS switch. The surge suppression device is configured to protect electronic components from voltage surges or current surges.
1. A surge suppression device, comprising:
a micro electromechanical system (MEMS) switch electrically connected to a current path;
a voltage clamping transient voltage suppression (TVS) device electrically connected in series to the MEMS switch, wherein the MEMS switch is configured to switch between an open state and a closed state, the MEMS switch is configured to facilitate current flow from the current path to the voltage clamping TVS device when the MEMS switch is in the closed state, and the MEMS switch is configured to block current flow from the current path to the voltage clamping TVS device when the MEMS switch is in the open state, and a capacitance of the voltage clamping TVS device is reduced by at least 80% when the MEMS switch is in the open state; and
a control circuitry operatively coupled to the MEMS switch and configured to control switching of the MEMS switch based on a measured level of current or a measured level of voltage in the current path, wherein the control circuitry is configured to switch the MEMS switch from the open state to the closed state when the measured level of current is greater than a current threshold or when the measured level of voltage is greater than a voltage threshold;
wherein the current threshold and voltage threshold comprise one of:
a minimum value of transient current or transient voltage in the current path that defines a transient surge current or transient surge voltage; or
a pre-defined percentage of the minimum value of transient current or transient voltage in the current path that defines a transient surge current or transient surge voltage.
2. The surge suppression device of claim 1 , wherein a leakage current of the voltage clamping TVS device is reduced by at least 60% when the MEMS switch is in the open state.
3. The surge suppression device of claim 1 , comprising a second voltage clamping TVS device electrically connected to the MEMS switch in series, wherein the second voltage clamping TVS device is electrically connected to the voltage clamping TVS device in parallel or in series.
4. The surge suppression device of claim 1 , wherein the current path is electrically connected to processing circuitry, and the MEMS switch and the voltage clamping TVS device of the surge suppression device are electrically connected to the processing circuitry in parallel.
5. The surge suppression device of claim 1 , wherein the voltage clamping TVS device comprises silicon, silicon carbide, zinc oxide, gallium oxide, gallium nitride, diamond, aluminum nitride, or boron nitride.
6. The surge suppression device of claim 1 , wherein the voltage clamping TVS device operates using a punch-through mode, an avalanche mode, or a combination thereof.
7. The surge suppression device of claim 1 , wherein the voltage clamping TVS device comprises a metal-oxide varistor.
8. The surge suppression device of claim 1 , wherein the voltage clamping TVS device comprises a zener diode.
9. The surge suppression device of claim 1 , wherein the voltage clamping TVS device comprises a clamping TVS device.
10. The surge suppression device of claim 1 , wherein the voltage clamping TVS device comprises a crowbar TVS device.
11. A surge suppression circuit, comprising:
a current path electrically connected to protected circuitry;
a micro electromechanical system (MEMS) switch electrically connected to the current path, wherein the MEMS switch is configured to switch between an open state and a closed state;
a transient voltage suppression (TVS) device electrically connected to the MEMS switch in series, wherein the MEMS switch and the TVS device are electrically connected to the protected circuitry in parallel, and the MEMS switch is configured to allow current to flow from the current path to the TVS device when the MEMS switch is in the closed state and to block the flow of current from the current path to the TVS device when the MEMS switch is in the open state; and
a control circuitry operatively coupled to the MEMS switch and configured to control switching of the MEMS switch based on a measured level of current or a measured level of voltage in the current path, wherein the control circuitry is configured to switch the MEMS switch from the open state to the closed state when the measured level of current is greater than a current threshold or when the measured level of voltage is greater than a voltage threshold;
wherein the current threshold and voltage threshold comprise one of:
a minimum value of transient current or transient voltage in the current path that defines a transient surge current or transient surge voltage; or
a pre-defined percentage of the minimum value of transient current or transient voltage in the current path that defines a transient surge current or transient surge voltage.
12. The surge suppression circuit of claim 11 , wherein the TVS device comprises silicon, silicon carbide, zinc oxide, gallium oxide, gallium nitride, diamond, aluminum nitride, or boron nitride.
13. The surge suppression circuit of claim 11 , wherein a capacitance of the TVS device is reduced by at least 95% when the MEMS switch is in the open state.
14. The surge suppression circuit of claim 11 , wherein a leakage current of the TVS device is reduced by at least 90% when the MEMS switch is in the open state.
15. A system, comprising:
a controller comprising processing circuitry;
an electrical conduit configured to transfer a signal to the controller;
a surge suppression circuit according to claim 11 electrically connected to the electrical conduit and electrically connected to the controller in parallel.
16. The system of claim 15 , wherein the signal comprises a radio-frequency communication signal.
17. The system of claim 16 , wherein the TVS device comprises silicon, silicon carbide, zinc oxide, gallium oxide, gallium nitride, diamond, aluminum nitride, or boron nitride.
18. The system of claim 17 , wherein a capacitance of the TVS device is reduced by at least 80% when the MEMS switch is in the open state.
19. The surge suppression circuit of claim 11 , wherein the TVS device comprises a voltage clamping TVS device.
20. The surge suppression circuit of claim 11 , wherein the TVS device comprises a crowbar TVS device.