Image sensor
An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.
1. An image sensor, comprising:
a pixel sensing circuit;
a pixel electrode disposed on the pixel sensing circuit, wherein the pixel electrode is electrically connected to the pixel sensing circuit and comprises a first electrode and a second electrode, a top surface of the first electrode and a top surface of the second electrode are coplanar in a horizontal direction, and a bottom surface of the first electrode and a bottom surface of the second electrode are coplanar in the horizontal direction, wherein the first electrode and the second electrode have different polarities;
a pixel isolation structure disposed on the pixel sensing circuit; and
an opto electrical conversion layer disposed on the pixel sensing circuit, wherein the opto electrical conversion layer is disposed between the first electrode and the second electrode, a top surface of the opto electrical conversion layer is below a top surface of the pixel isolation structure, and the horizontal direction is parallel to the top surface of the opto electrical conversion layer.
2. The image sensor according to claim 1 , wherein a height difference between the top surface of the opto electrical conversion layer and the top surface of the pixel isolation structure is larger than or equal to 0.1 μm.
3. The image sensor according to claim 1 , wherein the pixel isolation structure further comprises a plurality of non-conductive layers on the first electrode and the second electrode, and the top surface of the pixel isolation structure is a plurality of top surfaces of the non-conductive layers.
4. The image sensor according to claim 1 , wherein the pixel isolation structure further comprises a plurality of metal layers on the first electrode and the second electrode, and the top surface so the pixel isolation structure is a plurality of top surfaces of the metal layers.
5. The image sensor according to claim 1 , wherein the pixel isolation structure further comprises a plurality of metal layers and a plurality of non-conductive layers, the metal layers are disposed on the non-conductive layers, and the top surface of the pixel isolation structure is a plurality of top surfaces of the metal layers.
6. The image sensor according to claim 1 , wherein the pixel isolation structure defines a plurality of pixel regions, the opto electrical conversion layer has a plurality of opto electrical conversion portions separated from one another, and each of the opto electrical conversion portions is disposed corresponding to each of pixel regions.
7. The image sensor according to claim 1 , wherein the opto electrical conversion layer comprises at least one of an organic material and an inorganic-organic composite material.
8. The image sensor according to claim 7 , wherein the opto electrical conversion layer comprises a quantum dot material, a methyl ammonium lead iodide perovskite material, or a methyl ammonium lead iodide chloride perovskite material.
9. The image sensor according to claim 1 , wherein the opto electrical conversion layer comprises a photo sensing layer and a carrier transport layer, and the carrier transport layer is disposed between the pixel isolation structure and the photo sensing layer.