Semiconductor device and method for manufacturing the same
According to one embodiment, the stacked body includes a plurality of metal films, a plurality of silicon oxide films, and a plurality of intermediate films. The intermediate films are provided between the metal films and the silicon oxide films. The intermediate films contain silicon nitride. Nitrogen composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the metal films than on sides of interfaces between the intermediate films and the silicon oxide films. Silicon composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the silicon oxide films than on sides of interfaces between the intermediate films and the metal films.
1. A semiconductor device, comprising:
a stacked body including a plurality of metal films, a plurality of silicon oxide films, and a plurality of intermediate films, the metal films containing at least one of tungsten and molybdenum, the intermediate films being provided between the metal films and the silicon oxide films, contacting the metal films and the silicon oxide films, and containing silicon nitride, each layer of the intermediate films being separated from each other in a stacking direction of the stacked body;
a pipe-like configuration film extending in the stacking direction of the stacked body in the stacked body; and
a memory film provided between the pipe-like configuration film and one of the metal films,
nitrogen composition ratios of the intermediate films being higher on sides of interfaces between the intermediate films and the metal films than on sides of interfaces between the intermediate films and the silicon oxide films,
silicon composition ratios of the intermediate films being higher on sides of interfaces between the intermediate films and the silicon oxide films than on sides of interfaces between the intermediate films and the metal films,
wherein the memory film includes
a blocking insulating film provided between the pipe-like configuration film and one of the metal films,
a charge storage film provided between the pipe-like configuration film and the blocking insulating film, and
a tunneling insulating film provided between the pipe-like configuration film and the charge storage film.
2. The semiconductor device according to claim 1 , wherein the memory film includes a silicon nitride film contacting the metal films.
3. The semiconductor device according to claim 1 , wherein the intermediate films include a first intermediate film contacting an upper surface of one of the metal films, and a second intermediate film contacting a lower surface of the one of the metal films.
4. The semiconductor device according to claim 3 , wherein the first intermediate film and the second intermediate film are not connected each other in the stacking direction.
5. The semiconductor device according to claim 1 , wherein the blocking insulating film is provided between one of the intermediate films and the pipe-like configuration film.
6. A semiconductor device, comprising:
a stacked body including a plurality of metal films, a plurality of silicon oxide films, and a plurality of intermediate films, the metal films containing at least one of tungsten and molybdenum, the intermediate films being provided between the metal films and the silicon oxide films, the intermediate films including a first intermediate film directly contacting an upper metallic surface of one of the metal films and a second intermediate film directly contacting a lower metallic surface of the one of the metal films, the first intermediate film and the second intermediate film being separated from each other in a stacking direction of the stacked body, and not connected with each other in the stacking direction;
a pipe-like configuration film extending in the stacking direction of the stacked body in the stacked body; and
a memory film provided between the pipe-like configuration film and one of the metal films,
nitrogen composition ratios of the intermediate films being higher on sides of interfaces between the intermediate films and the metal films than on sides of interfaces between the intermediate films and the silicon oxide films,
silicon composition ratios of the intermediate films being higher on sides of interfaces between the intermediate films and the silicon oxide films than on sides of interfaces between the intermediate films and the metal films.