METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
1 . A system for treating as reaction chamber, the system comprising:
a reactor comprising a reaction chamber;
a metal halide source fluidly coupled to the reactor;
a metal CVD source selected from the group consisting of one or more of organometallic compounds and aluminum CVD compounds fluidly coupled to the reactor;
a treatment reactant source coupled to the reactor; and
a vacuum pump coupled to the reactor.
2 . The system of claim 1 , further comprising a plasma source, wherein treatment reactant from the treatment reactant source is exposed to the plasma source to form one or more excited treatment reactant species.
3 . The system of claim 1 , further comprising a thermal excitation source, wherein treatment reactant from the treatment reactant source is exposed to the thermal excitation source to form one or more excited treatment reactant species.
4 . The system of claim 1 , wherein the treatment reactant source comprises one or more compounds selected from the group of compounds comprising one or more hydrogen atoms and compounds comprising a halogen.
5 . The system of claim 1 , wherein the treatment reactant source comprises one or more of ammonia, hydrogen, silane, methane, silicon hydrides, boron hydrides, halosilanes, haloboranes, alkenes, alkynes, and hydrazine and its derivatives.
6 . The system of claim 1 , wherein the treatment reactant source comprises a decomposition product of the CVD source.