Semiconductor device
View Patent ↗A power element and a temperature sensing element are formed on the same semiconductor substrate, and one end of a PN junction of the temperature sensing element is connected to a ground potential (VSS) or a power supply potential (VDD) through an intermediation of a resistor. A sum of a potential difference between both ends of the PN junction and a potential difference between both ends of the resistor is used as a temperature detection signal. The temperature sensing element can thus be formed in a recess formed in the power element while avoiding latch-up.
1. A semiconductor device, comprising:
a semiconductor substrate;
a power element and a temperature sensing element formed adjacent to each other on the semiconductor substrate; and
a resistor formed around the temperature sensing element,
the temperature sensing element having a PN junction formed in the semiconductor substrate, the PN junction having a P-type region and an N-type region, one of the P-type region and the N-type region being connected to one of a ground potential VSS and a power supply potential VDD through an intermediation of the resistor,
the power element having a recess for accommodating the temperature sensing element therein, none of a well, a source, a drain, and a gate electrode of the power element being formed in the recess.
2. A semiconductor device according to claim 1 , wherein a resistance value of the resistor is from 50Ω or more to 200 kΩ or less.
3. A semiconductor device according to claim 1 , wherein the resistor is formed of polycrystalline silicon.
4. A semiconductor device according to claims 1 ,
wherein a first region having one polarity of the PN junction of the temperature sensing element is surrounded by a second region having another polarity of the PN junction of the temperature sensing element in plan view,
wherein the second region is surrounded by a third region having the same polarity as the semiconductor substrate in plan view,
wherein the second region has a second high concentration region having the same polarity as the second region,
wherein the third region has a third high concentration region having the same polarity as the third region, and
wherein at least part of the resistor is sandwiched between the second high concentration region and the third high concentration region.
5. A semiconductor device according to claim 4 , wherein a width of the resistor is ½ or more of a distance between the second high concentration region and the third high concentration region.
6. A semiconductor device according to claims 1 ,
wherein the temperature sensing element has a rectangular shape, and
wherein at least two sides of the rectangular shape conform to an outer profile of the power element.
7. A semiconductor device according to claims 1 ,
wherein the temperature sensing element has a rectangular shape, and
wherein at least three sides of the rectangular shape conform to an outer profile of the power element.
8. A semiconductor device according to claims 1 ,
wherein the temperature sensing element has a rectangular shape, and
wherein at least four sides of the rectangular shape conform to an outer profile of the power element.
9. A semiconductor device according to claims 1 , wherein a sum of a potential difference between both ends of the PN junction and a potential difference between both ends of the resistor is used as a temperature detection signal.
10. A semiconductor device according to claim 9 , wherein the temperature detection signal is used to provide a delay function to a circuit configured to control the power element.
11. A semiconductor device according to claims 1 , further comprising a pad,
wherein part of metal wiring for connecting the power element and the pad to each other is routed at least partially over the temperature sensing element.