Process for group III-V semiconductor nanostructure synthesis and compositions made using same
Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
1. A composition, comprising: one or more surfactants, a first precursor comprising a Group V atom, and a second precursor comprising a Group III atom, wherein the temperature of the composition is at least 360° C.
2. The composition of claim 1 , wherein the first precursor comprises a trisubstituted Group V atom, where the trisubstituted Group V atom is other than a) a trialkyl substituted Group V atom comprising an unbranched and unsubstituted alkyl group, b) an H 3 substituted Group V atom, c) an H 2 alkyl substituted Group V atom comprising an unbranched and unsubstituted alkyl group, d) an Halkyl 2 substituted Group V atom comprising an unbranched and unsubstituted alkyl group, or e) a tris(trialkylsilyl) substituted Group V atom.
3. The composition of claim 1 , wherein the second precursor comprises a) a Group III inorganic compound other than a Group III halide, b) a Group III acetate, or c) a Group III organometallic compound other than a trialkyl substituted Group III atom comprising an unbranched and unsubstituted alkyl group.
4. The composition of claim 1 , wherein the one or more surfactants comprises a first surfactant, a second surfactant, or a mixture of the first and second surfactants.
5. The composition of claim 4 , wherein the first surfactant is a tri-n-alkyl phosphine, a tri-n-alkyl phosphine oxide, an alkyl amine, or an alkyl- and/or aryl-thiol.
6. The composition of claim 4 , wherein the second surfactant is an alkyl amine, a phosphonic acid, a phosphinic acid, a carboxylic acid, a boronic acid, or a sulfonic acid, or a deprotonated form or a condensate thereof.
7. The composition of claim 1 , wherein the temperature of the composition is at least 380° C.
8. The composition of claim 1 , wherein the temperature of the composition is at least 380° C. to 420° C.
9. A method for production of nanostructures, the method comprising:
providing a surfactant, the surfactant comprising a Group V atom substituted with three unsaturated groups;
providing one or more precursors; and
reacting the one or more precursors in the presence of the surfactant to produce the nanostructures.
10. The method of claim 9 , wherein the surfactant is a trialkylphenylethynylphosphine.
11. The method of claim 9 , wherein the one or more precursors comprises a first precursor comprising a trisubstituted Group V atom, where the trisubstituted Group V atom is other than a) a trialkyl substituted Group V atom comprising an unbranched and unsubstituted alkyl group, b) an H 3 substituted Group V atom, c) an H 2 allyl substituted Group V atom comprising an unbranched and unsubstituted alkyl group, d) an Halkyl 2 substituted Group V atom comprising an unbranched and unsubstituted alkyl group, or e) a tris(trialkylsilyl) substituted Group V atom; and a second precursor comprising a) a Group III inorganic compound other than a Group III halide, b) a Group III acetate, or c) a Group III organometallic compound other than a trialkyl substituted Group III atom comprising an unbranched and unsubstituted alkyl group.
12. A composition, comprising:
a surfactant, the surfactant comprising a Group V atom substituted with three unsaturated groups; and one or more precursors.
13. The composition of claim 12 , wherein the surfactant is a trialkylphenylethynylphosphine.
14. The composition of claim 12 , wherein the one or more precursors comprises a first precursor comprising a trisubstituted Group V atom, where the trisubstituted Group V atom is other than a) a trialkyl substituted Group V atom comprising an unbranched and unsubstituted alkyl group, b) an H 3 substituted Group V atom, c) an H 2 alkyl substituted Group V atom comprising an unbranched and unsubstituted alkyl group, d) an Halkyl 2 substituted Group V atom comprising an unbranched and unsubstituted alkyl group, or e) a tris(trialkylsilyl) substituted Group V atom; and a second precursor comprising a) a Group III inorganic compound other than a Group III halide, b) a Group III acetate, or c) a Group III organometallic compound other than a trialkyl substituted Group II atom comprising an unbranched and unsubstituted alkyl group.