Glass substrate for mask blank, and method for producing the same
View Patent ↗A glass substrate for a mask blank includes two main surfaces facing each other and surfaces to be chamfered. The surfaces to be chamfered are provided peripherally around the two main surfaces. A flatness of one of the main surfaces is 100 nm or less. On the surface to be chamfered from which substrate corner parts are excluded, each of the substrate corner part being portions where a distance from an outer end of a two-dimensional projection profile of the one of the main surfaces and the surface to be chamfered is within 10 mm, a waviness measured in a range of 2 mm at an arbitrary part in a direction parallel to one side closest to the surface to be chamfered in the two-dimensional projection profile is 50 nm or less.
1. A glass substrate for a mask blank, comprising two main surfaces facing each other and chamfered surfaces provided at peripheries of the two main surfaces, wherein
a flatness of at least one of the main surfaces is 100 nm or less, and
on the chamfered surfaces surrounding the at least one of the main surfaces and being other than corner portions which are 10 mm or less apart from outer corners of the chamfered surface in a plan view of the glass substrate, a waviness measured along a line segment having a length of 2 mm in a direction parallel to a side of the chamfered surface which is closest to the line segment is 50 nm or less.
2. A glass substrate for a mask blank, comprising two main surfaces facing each other and chamfered surfaces provided at peripheries of the two main surfaces, wherein
a flatness of each of the two main surfaces is 100 nm or less, and
on the chamfered surfaces surrounding the each of the two main surfaces and being other than corner portions which are 10 mm or less apart from outer corners of the chamfered surface in a plan view of the glass substrate, a waviness measured along a line segment having a length of 2 mm in a direction parallel to a side of the chamfered surface which is closest to the line segment is 50 nm or less.
3. The glass substrate according to claim 1 , wherein the flatness of the at least one of the main surfaces is 50 nm or less.
4. The glass substrate according to claim 1 , wherein the flatness of the at least one of the main surfaces is 30 nm or less.
5. The glass substrate according to claim 1 , wherein the glass substrate has a coefficient of thermal expansion at 20° C. of 600 ppb/° C. or less.
6. The glass substrate according to claim 1 , wherein the glass substrate has a coefficient of thermal expansion at 20° C. of 400 ppb/° C. or less.
7. The glass substrate according to claim 1 , wherein the glass substrate has a coefficient of thermal expansion at 20° C. of 100 ppb/° C. or less.
8. The glass substrate according to claim 1 , wherein the glass substrate has a coefficient of thermal expansion at 20° C. of 30 ppb/° C. or less.
9. The glass substrate according to claim 2 , wherein the flatness of the each of the two main surfaces is 50 nm or less.
10. The glass substrate according to claim 2 , wherein the flatness of the each of the two main surfaces is 30 nm or less.
11. The glass substrate according to claim 2 , wherein the glass substrate has a coefficient of thermal expansion at 20° C. of 600 ppb/° C. or less.
12. The glass substrate according to claim 2 , wherein the glass substrate has a coefficient of thermal expansion at 20° C. of 400 ppb/° C. or less.
13. The glass substrate according to claim 2 , wherein the glass substrate has a coefficient of thermal expansion at 20° C. of 100 ppb/° C. or less.
14. The glass substrate according to claim 2 , wherein the glass substrate has a coefficient of thermal expansion at 20° C. of 30 ppb/° C. or less.
15. A method for producing a glass substrate for a mask blank, the method comprising:
scanning a main surface of the glass substrate by moving a local processing tool whose unit processing area is smaller than an area of the main surface of the glass substrate, thereby processing the main surface; and thereafter
polishing a surface to be chamfered provided at a periphery of the main surface so that a polishing amount is 200 nm thick or more; and
polishing the main surface with a polishing pad whose contact area in polishing is larger than the area of the main surface and a polishing slurry so that a polishing amount is 200 nm thick or more and 2000 nm thick or less.