Memoryless common-mode insensitive and low pulling VCO

1. A voltage controlled oscillator (VCO) comprising:

an active device, wherein the active device further includes an n-type transistor having a drain, gate and bulk; a p-type transistor having a drain, gate and bulk; wherein the n-type transistor and the p-type transistor share a common source; a first capacitor coupled between the gate of n-type transistor and the gate of p-type transistor; a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor; and a third capacitor coupled between the bulk of n-type transistor and the bulk of p-type transistor;

a tuning block coupled to the common source to form a common gate amplifier; and

at least one tuning element coupled to the active device for changing the overall capacitance of the VCO; wherein the VCO has a high breakdown voltage, is memory less and traps even harmonic signals.

2. The VCO of claim 1 , wherein each of the first, second and third capacitors comprises any of a variable capacitor, a capacitor coupled in series with a resistor, a capacitor coupled in parallel with a resistor; a capacitor coupled serially with an inductor, a capacitor coupled in parallel with an inductor.

3. The VCO of claim 1 , wherein the at least tuning element includes any of inductors, capacitors, resistors and transformers which comprises two inputs and one output.

4. A differential voltage controlled oscillator (VCO) comprising:

first and second active devices; wherein each of the first and second active devices further includes an n type transistor having a drain, gate and bulk; a p-type transistor having a drain, gate and bulk; wherein the n-type transistor and the p-type transistor share a common source; a first capacitor coupled between the gate of n-type transistor and the gate of p-type transistor; a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor; and a third capacitor coupled between the bulk of n-type transistor and the bulk of p-type transistor;

a fourth capacitor coupled between the bulk of the n-type transistor of first active device to shared source of second active device;

a fifth capacitor coupled between bulk of p-type transistor of first active device to shard source of second active device;

a sixth capacitor coupled between the bulk n-type transistor of second active device to shared source of first active device;

a seventh capacitor coupled between the bulk of p-type transistor of second active device to shared source of first active device;

a tuning block coupled to the common source to form a common gate amplifier;

at least one first tuning device coupled between the drain of the n-type transistor of the first active device and the drain of the n-type transistor of the second active device;

at least one second tuning device coupled between the sources of the n-type and p-type transistors of the first active device and the sources of the n-type and p-type transistors of the second active device; and

at least one third tuning device coupled between the drain of the p-type transistor of the first active device and the drain of the p-type transistor of the second first active device; wherein the differential VCO has a high breakdown voltage, is memory less and traps even harmonic signals.

5. The differential VCO of claim 4 , wherein each of the first, second and third capacitors comprises any of a variable capacitor, a capacitor coupled in series with a resistor, a capacitor coupled in parallel with a resistor; a capacitor coupled serially with an inductor, a capacitor coupled in parallel with an inductor.

6. The differential VCO of claim 4 , wherein each of the first, second and third tuning elements includes any of inductors, capacitors, resistors and transformers which comprises two inputs and one output.

7. The differential VCO of claim 4 , wherein the first and second tuning elements are utilized for coarse tuning of the VCO and the second tuning element is utilized for fine tuning of the VCO.