Semiconductor light-emitting device
View Patent ↗A semiconductor light-emitting device comprises an epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and second semiconductor stack for emitting a light; and a main light-extraction surface on the first semiconductor stack, wherein the light passes through the main light-extraction surface. The main light-extraction surface comprises a first light-extraction region, a second light-extraction region, and a maximum near-field luminous intensity. The distribution of the near-field luminous intensity in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the distribution of the near-field luminous intensity in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity. A ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45.
1. A semiconductor light-emitting device comprising:
an epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and the second semiconductor stack for emitting a light; and
a main light-extraction surface on the first semiconductor stack, wherein the light passes through the main light-extraction surface, wherein the main light-extraction surface comprises a first light-extraction region, a second light-extraction region and a maximum near-field luminous intensity,
wherein the near-field luminous intensity distributing in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the near-field luminous intensity distributing in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity, and a ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45.
2. The semiconductor light-emitting device according to claim 1 , wherein an area of the first semiconductor stack is the same as an area of the second semiconductor stack.
3. The semiconductor light-emitting device according to claim 1 , wherein the main light-extraction surface further comprises an edge, and the second light-extraction region is between the first light-extraction region and the edge.
4. The semiconductor light-emitting device according to claim 3 , wherein the main light-extraction surface has a circumference, the epitaxial structure has a thickness, and a ratio of the thickness to the circumference is larger than 1%.
5. The semiconductor light-emitting device according to claim 1 , wherein a shape of the first light-extraction region is the same as a shape of the main light-extraction surface.
6. The semiconductor light-emitting device according to claim 1 , wherein a shape of the main light-extraction surface comprises a circle or a regular polygon.
7. The semiconductor light-emitting device according to claim 1 , further comprising an upper electrode on the first semiconductor stack and a second ohmic contact structure on the second semiconductor stack.
8. The semiconductor light-emitting device according to claim 7 , wherein the upper electrode, the second ohmic contact structure, and a center point of the main light-extraction surface are overlapped in a vertical direction.
9. The semiconductor light-emitting device according to claim 7 , wherein an area of the upper electrode is between 1% and 10% of an area of the main light-extraction surface, and an area of the second ohmic contact structure is between 1% and 10% of the area of the main light-extraction surface.
10. The semiconductor light-emitting device according to claim 7 , wherein a material of the upper electrode comprises Ge, Au, Ni, or the combination thereof.
11. The semiconductor light-emitting device according to claim 7 , wherein a material of the second ohmic contact structure comprises transparent conductive material.
12. The semiconductor light-emitting device according to claim 7 , further comprising a reflective stack covering the second ohmic contact structure and the second semiconductor stack.
13. The semiconductor light-emitting device according to claim 12 , further comprising a conductive substrate and an adhesive layer between the reflective stack and the conductive substrate.
14. The semiconductor light-emitting device according to claim 1 , wherein a thickness of the first semiconductor stack and a thickness of the second semiconductor stack both are smaller than 500 nm.
15. The semiconductor light-emitting device according to claim 1 , wherein a thickness of the epitaxial structure is smaller than 3 μm.
16. The semiconductor light-emitting device according to claim 1 , wherein the epitaxial structure is devoid of distributed Bragg reflector (DBR) between the active layer and the main light-extraction surface.
17. The semiconductor light-emitting device according to claim 1 , wherein the epitaxial structure further comprises a control layer, wherein the control layer comprises a conductive region and an oxide region surrounding the conductive region.
18. The semiconductor light-emitting device according to claim 17 , wherein the conductive region and the first light-extraction region are overlapped in a vertical direction.
19. The semiconductor light-emitting device according to claim 17 , wherein the conductive region comprises (Al x Ga 1-x )As, 0.9<x≦1.
20. The semiconductor light-emitting device according to claim 1 , wherein an area of the main light-extraction surface is smaller than 10 4 μm 2 .