IP Library Granted Patent US 10,519,037
Granted Patent B2
US 10,519,037 · App. 14/997,680 · Granted Dec 31, 2019

Multipass transfer surface for dynamic assembly

Inventors: Sourobh Raychaudhuri (Mountain View, CA); Jeng Ping Lu (Fremont, CA); David K. Biegelsen (Portola Valley, CA)
Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
B81C99/002H01L21/6833H02N13/00
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Quick Facts
Patent No.
US 10,519,037
App. No.
14/997,680
Granted
Dec 31, 2019
Kind
B2
Abstract

An intermediate transfer surface includes a substrate, a two-dimensional array of electrodes, a dielectric spacer layer on the two-dimensional array of electrodes, and a voltage controller electrically connected to the array of electrodes. A method of manufacturing an intermediate transfer surface, depositing an array of etch stops on a conductive surface, etching the conductive surface to form mesas of the conductive surface separated by gaps, and coating the mesas with a dielectric coating. A microassembly system includes an assembly surface having a first two dimensional array of potential wells on a first surface, a first voltage source electrically connected to the first array of potential wells, an intermediate transfer surface having a second two dimensional array of potential wells on a second surface arranged to face the first surface, and a second voltage source electrically connected to the second array of potential wells.

Claims (29)

1. An intermediate transfer surface, comprising:

a substrate;

a two-dimensional array of electrodes on the substrate;

a dielectric spacer layer on the two-dimensional array of electrodes; and

a voltage controller electrically connected to the array of electrodes, wherein the intermediate transfer surface is positioned to receive an assembly having a registration from an assembly surface and the voltage controller is to generate an electrostatic field to attract the assembly from the assembly surface without mechanical transfer such that the registration is maintained;

wherein the dielectric spacer layer forms a final substrate for the assembly transferred to the intermediate transfer surface.

2. The intermediate transfer surface of claim 1 , wherein the array of electrodes comprise protruding exposed regions of a conductive textured substrate, the protruding regions adjacent to recessed regions filled with a dielectric.

3. The intermediate transfer surface of claim 1 wherein the array of electrodes are mesas formed of the substrate separated by gaps filled with dielectric.

4. The intermediate transfer surface of claim 1 , wherein the two-dimensional array of electrodes have a pitch finer than a pitch of an assembly surface.

5. The intermediate transfer surface of claim 1 , wherein the two-dimensional array of electrodes are connected to the voltage controller such that the voltage controller can apply different potentials to either individual electrodes or groups of electrodes.

6. The intermediate transfer surface of claim 1 , wherein the substrate comprises a flexible material.

7. The intermediate transfer surface of claim 1 , wherein the substrate is mounted on a flexible roll.

8. The intermediate transfer surface of claim 1 , wherein the voltage controller comprises an adjustable voltage controller.

9. The intermediate transfer surface of claim 1 , wherein a local optical curing system is paired with the transfer surface to direct electromagnetic energy at gaps between potential wells of the intermediate transfer surface.

10. A microassembly system, comprising:

an assembly surface having a first two dimensional array of electrodes on a first surface;

a first voltage source electrically connected to the first array of electrodes to form potential wells;

an intermediate transfer surface having a second two dimensional array of electrodes on a second surface arranged to face the first surface and positioned to receive an assembly from the assembly surface; and

a second voltage source electrically connected to the second array of electrodes to form potential wells, such that the second voltage source is to generate an electrostatic field to attract the assembly from the assembly surface without mechanical transfer.

11. The microassembly system of claim 10 , wherein the second voltage source is electrically connected to the second array of electrodes in a checkerboard pattern to allow uniform control of potential wells across the array.

12. The microassembly system of claim 10 , wherein the second voltage source is electrically connected to the second array of electrodes to allow potential wells in each line of the array to be controlled together.

13. The microassembly system of claim 10 , wherein the second voltage source is electrically connected to the second array of electrodes to allow individual control of potential wells across the array.

14. The microassembly system of claim 10 , wherein the first voltage source and the second voltages source are controllable to have the first voltage source generate a voltage to repulse the assembly at the same time that the second voltage source generates a voltage to attract the assembly.

15. An intermediate transfer surface, comprising:

a substrate;

a two-dimensional array of electrodes on the substrate;

a dielectric spacer layer on the two-dimensional array of electrodes;

a local curing system that is paired with the transfer surface to direct electromagnetic energy at gaps between potential wells of the intermediate transfer surface; and

a voltage controller electrically connected to the array of electrodes, wherein the intermediate transfer surface is positioned to receive an assembly having a registration from an assembly surface and the voltage controller is to generate an electrostatic field to attract the assembly from the assembly surface without mechanical transfer such that the registration is maintained.

Assignments (10)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 14, 2025
From: XEROX CORPORATION
To: GENESEE VALLEY INNOVATIONS, LLC
Reel/Frame 073562/0677 →
SECOND LIEN NOTES PATENT SECURITY AGREEMENT Recorded Jul 2, 2025
From: XEROX CORPORATION
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 071785/0550 →
FIRST LIEN NOTES PATENT SECURITY AGREEMENT Recorded Apr 11, 2025
From: XEROX CORPORATION
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 070824/0001 →
SECURITY INTEREST Recorded Feb 13, 2024
From: XEROX CORPORATION
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 066741/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT RF 064760/0389 Recorded Feb 13, 2024
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: XEROX CORPORATION
Reel/Frame 068261/0001 →
SECURITY INTEREST Recorded Nov 20, 2023
From: XEROX CORPORATION
To: JEFFERIES FINANCE LLC, AS COLLATERAL AGENT
Reel/Frame 065628/0019 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVAL OF US PATENTS 9356603, 10026651, 10626048 AND INCLUSION OF US PATENT 7167871 PREVIOUSLY RECORDED ON REEL 064038 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jun 28, 2023
From: PALO ALTO RESEARCH CENTER INCORPORATED
To: XEROX CORPORATION
Reel/Frame 064161/0001 →
SECURITY INTEREST Recorded Jun 22, 2023
From: XEROX CORPORATION
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 064760/0389 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 20, 2023
From: PALO ALTO RESEARCH CENTER INCORPORATED
To: XEROX CORPORATION
Reel/Frame 064038/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2016
From: RAYCHAUDHURI, SOUROBH; LU, JENG PING; BIEGELSEN, DAVID K.
To: PALO ALTO RESEARCH CENTER INCORPORATED
Reel/Frame 037510/0039 →