LIGHT EMITTING DEVICE WITH EPITAXIAL STRUCTURE
A light emitting device includes a carrier, at least one epitaxial structure, at least one buffer pad and at least one bonding pad. The epitaxial structure is disposed on the carrier. The buffer pad is disposed between the carrier and the epitaxial structure, wherein the epitaxial structure is temporarily bonded to the carrier by the buffer pad. The bonding pad is disposed on the epitaxial structure, wherein the epitaxial structure is electrically connected to a receiving substrate by the bonding pad.
1 . A light emitting device, comprising:
a carrier;
at least one epitaxial structure, disposed on the carrier and comprising:
a first type semiconductor layer;
a second type semiconductor layer; and
an active layer, located between the first type semiconductor layer and the second type semiconductor layer, wherein a thickness of the second type semiconductor layer is greater than a thickness of the first type semiconductor layer;
at least one buffer pad, disposed on a top surface of the carrier and between the carrier and the epitaxial structure, wherein the second type semiconductor layer directly contacts the buffer pad, the epitaxial structure is bonded to the carrier by the buffer pad, and a material of the buffer pad comprises a polymer, and the buffer pad exposes part of the top surface, wherein an area of an orthogonal projection of the second type semiconductor layer is different from of an area of an orthogonal projection of the buffer pad on the carrier; and
at least one bonding pad, disposed on the epitaxial structure and between the epitaxial structure and a receiving substrate, wherein the epitaxial structure is electrically connected to the receiving substrate through the bonding pad.
2 . The light emitting device as claimed in claim 1 , wherein the carrier is a tentative substrate.
3 . (canceled)
4 . The light emitting device as claimed in claim 1 , wherein a side length of the first type semiconductor layer is smaller than a side length of the second type semiconductor layer, and a difference in side lengths between the first type semiconductor layer and the second type semiconductor layer is in a range from 0.5 micrometers to 5 micrometers.
5 . (canceled)
6 . The light emitting device as claimed in claim 1 , wherein the thickness of the second type semiconductor layer is 3 times to 15 times of a thickness of the active layer, and the thickness of the second type semiconductor layer is 10 times to 20 times of the thickness of the first type semiconductor layer.
7 . The light emitting device as claimed in claim 1 , wherein the at least one bonding pad comprises at least one first bonding pad and at least one second bonding pad, the first bonding pad and the second bonding pad are located at the same side of the epitaxial structure, the first bonding pad is electrically connected to the first type semiconductor layer, and the second bonding pad is electrically connected to the second type semiconductor layer.
8 . The light emitting device as claimed in claim 1 , further comprising:
an insulating layer, disposed on the buffer pad and covering a sidewall of the epitaxial structure, wherein the insulating layer exposes a top surface of the epitaxial structure to form a contact opening, and the bonding pad is disposed on the contact opening and electrically connected to the epitaxial structure.
9 . The light emitting device as claimed in claim 1 , wherein an area ratio of the buffer pad to the epitaxial structure is R, and 0.6≦R<1 or 1<R≦1.2.
10 . The light emitting device as claimed in claim 1 , wherein in a vertical direction with respect to the carrier, the buffer pad and the epitaxial structure are conformal patterns.
11 . (canceled)
12 . The light emitting device as claimed in claim 1 , wherein a highest peak current density of an external quantum efficiency curve of the epitaxial structure is lower than 2 A/cm 2 .
13 . The light emitting device as claimed in claim 1 , wherein a defect density of the epitaxial structure is less than 5×10 8 /cm 2 .
14 . A light emitting device, comprising:
a carrier;
a plurality of epitaxial structures, disposed on a top surface of the carrier periodically and separately, wherein each of the epitaxial structures comprises:
a first type semiconductor layer;
a second type semiconductor layer; and
an active layer, located between the first type semiconductor layer and the second type semiconductor layer, wherein a thickness of the second type semiconductor layer is greater than a thickness of the first type semiconductor layer;
a plurality of buffer pads, disposed between the carrier and the epitaxial structures and respectively disposed in correspondence with the second type semiconductor layer of the epitaxial structures, wherein the epitaxial structures respectively and directly contact the buffer pads, the epitaxial structures are respectively bonded on the carrier by the buffer pads, the buffer pads expose part of the top surface of the carrier, and a material of the buffer pads comprises a polymer; and
a plurality of bonding pads, disposed on the epitaxial structures, wherein the epitaxial structures are electrically connected to a receiving substrate through the bonding pads, and a gap between any adjacent two of the buffer pads is 0.2 times to 2 times of a side length of each of the epitaxial structures.
15 . The light emitting device as claimed in claim 1 , wherein the epitaxial structure is temporarily bonded to the carrier by the buffer pad.
16 . The light emitting device as claimed in claim 1 , wherein the buffer pad is formed through thermal curing or UV curing.
17 . The light emitting device as claimed in claim 14 , wherein an area ratio of each of the buffer pads to each of the epitaxial structures is R, and 0.6≦R<1 or 1<R≦1.2.
18 . The light emitting device as claimed in claim 14 , wherein the bonding pads are disposed between the epitaxial structures and a receiving substrate.
19 . The light emitting device as claimed in claim 14 , wherein the epitaxial structures are temporarily bonded to the carrier by the buffer pads.