Composite having semiconductor structures including a nanocrystalline core and shell

1. A semiconductor structure, comprising:

an anisotropic nanocrystalline core comprising a first semiconductor material;

an anisotropic nanocrystalline shell comprising a second, different, semiconductor material completely surrounding the anisotropic nanocrystalline core, wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and the anisotropic nanocrystalline core is disposed off-center with respect to the anisotropic nanocrystalline shell in the first direction along the first axis, wherein the nanocrystalline shell extends in a second direction along a second axis orthogonal to the first axis and the anisotropic nanocrystalline core is further disposed off-center with respect to the anisotropic nanocrystalline shell in the second direction along the second axis, wherein the nanocrystalline shell is longer in the first direction along the first axis than in the second direction along the second axis, and wherein the anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot; and

an insulator layer encapsulating the anisotropic nanocrystalline shell and anisotropic nanocrystalline core.

2. The semiconductor structure of claim 1 , wherein the insulator layer is bonded directly to the anisotropic nanocrystalline shell.

3. The semiconductor structure of claim 2 , wherein the insulator layer passivates an outermost surface of the anisotropic nanocrystalline shell.

4. The semiconductor structure of claim 1 , wherein the insulator layer provides a barrier for the anisotropic nanocrystalline shell and anisotropic nanocrystalline core impermeable to an environment outside of the insulator layer.

5. The semiconductor structure of claim 1 , wherein the insulator layer encapsulates only a single anisotropic nanocrystalline shell/anisotropic nanocrystalline core pairing.

6. The semiconductor structure of claim 1 , wherein the insulator layer comprises a layer of material selected from the group consisting of silica (SiO x ), titanium oxide (TiO x ), zirconium oxide (ZrO x ) and alumina (AlO x ).

7. The semiconductor structure of claim 6 , wherein the insulator layer is a layer of silica having a thickness approximately in the range of 3-30 nanometers.

8. The semiconductor structure of claim 1 , wherein an outer surface of the insulator layer is ligand-free.

9. The semiconductor structure of claim 1 , wherein an outer surface of the insulator layer is ligand-functionalized.

10. The semiconductor structure of claim 1 , wherein the nanocrystalline core has a diameter approximately in the range of 2-5 nanometers, the first axis has a length approximately in the range of 5-40 nanometers, and the second axis has a length approximately in the range of 1-5 nanometers greater than the diameter of the nanocrystalline core, and wherein the insulator layer has a thickness approximately in the range of 1-20 nanometers along an axis co-axial with the first axis and has a thickness approximately in the range of 3-30 nanometers along an axis co-axial with the second axis.

11. The semiconductor structure of claim 1 , further comprising:

a nanocrystalline outer shell at least partially surrounding the anisotropic nanocrystalline shell, between the anisotropic nanocrystalline shell and the insulator layer, the nanocrystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials.

12. The semiconductor structure of claim 1 , wherein the quantum dot has a photoluminescence quantum yield (PLQY) of at least 90%.

13. The semiconductor structure of claim 1 , wherein emission from the quantum dot is mostly, or entirely, from the anisotropic nanocrystalline core.

14. The semiconductor structure of claim 13 , wherein emission from the anisotropic nanocrystalline core is at least approximately 75% of the total emission from the quantum dot.

15. The semiconductor structure of claim 1 , wherein an absorption spectrum and an emission spectrum of the quantum dot are essentially non-overlapping.

16. The semiconductor structure of claim 1 , wherein an absorbance ratio of the quantum dot for absorbance at 400 nanometers versus absorbance at an exciton peak for the quantum dot is approximately in the range of 5-35.

17. The semiconductor structure of claim 1 , wherein the quantum dot is a down-converting quantum dot.

18. The semiconductor structure of claim 1 , wherein the insulator layer is an amorphous layer.