Light-emitting device

1. A light-emitting device, comprising:

a light-emitting stack comprising a first surface and a second surface opposite to the first surface;

a first electrode formed on the second surface of the light-emitting stack;

a current blocking layer formed on the first surface of the light-emitting stack and corresponding to a location of the first electrode; and

a second electrode covering the current blocking layer and comprising a plurality of first metal layers and a plurality of second metal layers alternating with the plurality of first metal layers, wherein the plurality of first metal layers is discontinuous.

2. The light-emitting device of claim 1 , wherein the plurality of second metal layers alternates with the plurality of first metal layers for 2 to 12 times.

3. The light-emitting device of claim 1 , wherein the plurality of first metal layers comprises Al, Ti, W, Pt or Ni.

4. The light-emitting device of claim 1 , wherein the plurality of second metal layers comprises a thickness between 100 Å and 700 Å.

5. The light-emitting device of claim 1 , wherein the light-emitting stack comprises a first semiconductor layer comprising the second surface, a second semiconductor layer comprising the first surface and an active layer between the first semiconductor layer and the second semiconductor layer, and the first electrode is formed on a part of the first surface, and the light is emitted out the light-emitting stack from the second surface.

6. The light-emitting device of claim 1 , wherein one of the plurality of first metal layers directly contacts the first surface of the light-emitting stack.

7. The light-emitting device of claim 1 , further comprising a conductive substrate, and a conductive bonding layer formed between the conductive substrate and the second electrode.

8. The light-emitting device of claim 1 , wherein the first electrode comprises a pattern.