Methods of fabricating a polycrystalline diamond compact
View Patent ↗Embodiments relate to polycrystalline diamond compacts (“PDCs”) and methods of manufacturing such PDCs in which an at least partially leached polycrystalline diamond (“PCD”) table is infiltrated with a low viscosity cobalt-based alloy infiltrant. In an embodiment, a method includes forming a PCD table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (“HPHT”) process. The method includes at least partially leaching the PCD table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached PCD table. The method includes subjecting the at least partially leached PCD table and a substrate to a second HPHT process effective to at least partially infiltrate the at least partially leached PCD table with a cobalt-based alloy infiltrant having a composition at or near a eutectic composition of the cobalt-based alloy infiltrant.
1. A method of fabricating a polycrystalline diamond compact, the method comprising:
providing an at least partially leached polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions; and
subjecting the at least partially leached polycrystalline diamond table and a substrate including a cementing constituent having a cobalt-based alloy infiltrant to a high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with the cobalt-based alloy infiltrant;
wherein the cobalt-based alloy infiltrant is provided from the substrate and includes at least one eutectic forming alloying element in an amount at or near a eutectic composition for an alloy system of cobalt and the at least one eutectic forming alloying element.
2. The method of claim 1 wherein the cobalt-based alloy infiltrant includes cobalt and at least one eutectic forming alloying element selected from the group consisting of carbon, silicon, boron, phosphorus, tantalum, tantalum carbide, niobium, molybdenum, antimony, and tin.
3. The method of claim 1 wherein the cobalt-based alloy infiltrant includes cobalt and at least one eutectic forming alloying element selected from the group consisting of silicon, boron, phosphorous, tantalum, and tantalum carbide.
4. The method of claim 2 wherein the at least one eutectic forming alloying element is present in an amount that is not more than the eutectic composition.
5. The method of claim 2 wherein the at least one eutectic forming alloying element is silicon, the cobalt-based alloy infiltrant includes a cobalt-silicon alloy, and the silicon is present in an amount less than 12.5% by weight of the cobalt-silicon alloy.
6. The method of claim 2 wherein the at least one eutectic forming alloying element is silicon, the cobalt-based alloy infiltrant includes a cobalt-silicon alloy, and the carbon is present in an amount less than about 2% by weight of the cobalt-silicon alloy.
7. The method of claim 2 wherein the at least one eutectic forming alloying element is carbon, the cobalt-based alloy infiltrant includes a cobalt-carbon alloy, and the carbon is present in an amount less than 2.9% by weight of the cobalt-carbon alloy.
8. The method of claim 2 wherein the at least one eutectic forming alloying element is boron, the cobalt-based alloy infiltrant includes a cobalt-boron alloy, and the boron is present in an amount less than 5.5% by weight of the cobalt-boron alloy.
9. The method of claim 2 wherein the at least one eutectic forming alloying element is phosphorus, the cobalt-based alloy infiltrant includes a cobalt-phosphorus alloy, and the phosphorus is present in an amount less than 11.5% by weight of the cobalt-phosphorus alloy.
10. The method of claim 2 wherein the at least one eutectic forming alloying element is tantalum, the cobalt-based alloy infiltrant includes a cobalt-tantalum alloy, and the tantalum is present in an amount less than 32.4% by weight of the cobalt-tantalum alloy.
11. The method of claim 2 wherein the at least one eutectic forming alloying element is tantalum and carbon.
12. The method of claim 1 wherein the first high-pressure/high-temperature process performed at a cell pressure of at least about 7.5 GPa.
13. The method of claim 1 further comprising leaching the at least partially infiltrated polycrystalline diamond table to form a region extending inwardly from an exterior working surface thereof that is substantially free of the cobalt-based alloy infiltrant.
14. The method of claim 1 wherein the composition of the cobalt-based alloy infiltrant is 0.4 to 1.5 times the eutectic composition.
15. The method of claim 1 wherein the composition of the cobalt-based alloy infiltrant is 0.9 to 1.1 times the eutectic composition.
16. The method of claim 1 wherein the infiltration of the cobalt-based alloy infiltrant is only partially complete so that the polycrystalline diamond table includes a first region adjacent to the substrate that includes the cobalt-based alloy infiltrant disposed in at least a portion of the interstitial regions thereof, and a second region extending inwardly from an exterior working surface that is free of the cobalt-based alloy infiltrant.
17. A method of fabricating a polycrystalline diamond compact, the method comprising:
providing an at least partially leached polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions;
disposing an infiltrant between the at least partially leached polycrystalline diamond table and a substrate to form an assembly, wherein the infiltrant includes a cobalt-based alloy having a composition at or near a eutectic composition;
wherein the cobalt-based alloy includes cobalt and at least one eutectic forming alloying element selected from the group consisting of boron, carbon, phosphorus, niobium, antimony, and tin; and
subjecting the assembly to a high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with the infiltrant.
18. The method of claim 17 wherein the at least one eutectic forming alloying element selected from the group consisting of boron, carbon, and phosphorus.
19. The method of claim 17 wherein the at least one eutectic forming alloying element is boron.
20. The method of claim 17 wherein the at least one eutectic forming alloying element is phosphorus.
21. A method of fabricating a polycrystalline diamond compact, the method comprising:
providing an at least partially leached polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions;
disposing an infiltrant between the at least partially leached polycrystalline diamond table and a substrate to form an assembly, wherein the infiltrant includes a cobalt-based alloy having a boron and silicon; and
subjecting the assembly to a high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with the infiltrant.
22. The method of claim 21 wherein the silicon and boron are present in the cobalt-based alloy in an amount at or near a eutectic composition for an alloy system of cobalt, boron, and silicon.
23. The method of claim 21 wherein the cobalt-based alloy includes at least one additional alloying element selected from the group consisting of carbon, phosphorus, tantalum, tantalum carbide, niobium, molybdenum, antimony, and tin.