Fabrication of correlated electron material devices
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
1. A method comprising:
exposing a substrate, in a chamber, to a first precursor in a gaseous state, the first precursor comprising a transition metal oxide, a transition metal, a transition metal compound, or any combination thereof, and a first ligand;
exposing the substrate to a second precursor in a gaseous state, the second precursor comprising an oxide so as to form a first layer of a film of correlated electron material; and
repeating the exposing of the substrate to the first and second precursors a sufficient number of times so as to form additional layers of the film of correlated electron material, the film of correlated electronic material exhibiting a first impedance state and a second impedance state, the first impedance state and the second impedance state to be substantially dissimilar from one another, the film of correlated electron material comprising an electron back-donating material in an atomic concentration of between 0.1% and 10.0%.
2. The method of claim 1 , wherein the electron back-donating material comprises carbonyl.
3. The method of claim 1 , further comprising purging the chamber of the first precursor for between 0.5 seconds and 180.0 seconds.
4. The method of claim 1 , wherein the exposing the substrate to the first precursor occurs over a duration of between 0.5 seconds and 180.0 seconds.
5. The method of claim 1 , further comprising repeating the exposing of the substrate between 50 and 900 times.
6. The method of claim 1 , further comprising repeating the exposing of the substrate until a thickness of the film of correlated electron material reaches between 1.5 nm and 150.0 nm.
7. The method of claim 1 , wherein the second precursor comprises oxygen (O 2 ), ozone (O 3 ), water (H 2 O), nitric oxide (NO), nitrous oxide (N 2 O) or hydrogen peroxide (H 2 O 2 ), or any combination thereof.
8. The method of claim 1 , wherein the exposing of the substrate to the first precursor, the exposing of the substrate to a second precursor, or any combination thereof, occurs at a temperature of between 20.0° and 1000.0° C.
9. The method of claim 1 , additionally comprising annealing the exposed substrate in the chamber.
10. The method of claim 9 , further comprising raising the temperature of the chamber to between 20.0° C. and 900.0° C. prior to initiating the annealing.
11. The method of claim 9 , wherein the exposed substrate is annealed in an environment comprising gaseous nitrogen (N 2 ), hydrogen (H 2 ), oxygen (O 2 ), water or steam (H 2 O), nitric oxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), ozone (O 3 ), argon (Ar), helium (He), ammonia (NH 3 ), carbon monoxide (CO), methane (CH 4 ), acetylene (C 2 H 2 ), ethane (C 2 H 6 ), propane (C 3 H 8 ), ethylene (C 2 H 4 ) or butane (C 4 H 10 ), or any combination thereof.
12. A method comprising:
exposing a substrate, in a chamber, to a first precursor in a gaseous state, the first precursor comprising a transition metal oxide, a transition metal, a transition metal compound, or any combination thereof, and a first ligand;
exposing the substrate to a second precursor in a gaseous state, the second precursor comprising an oxide so as to form a first layer of a film of correlated electron material; and
repeating the exposing of the substrate to the first and second precursors a sufficient number of times so as to form additional layers of the film of correlated electron material, the film of correlated electronic material exhibiting a first impedance state and a second impedance state, the first impedance state and the second impedance state to be substantially dissimilar from one another, the first precursor comprising nickel amidinate (Ni(AMD)), nickel dicyclopentadienyl (Ni(Cp) 2 ), nickel diethylcyclopentadienyl (Ni(EtCp) 2 ), Bis(2,2,6,6-tetramethylheptane-3,5-dionato)Ni(II) (Ni(thd) 2 ), nickel acetyl acetonate (Ni(acac) 2 ), bis(methylcyclopentadienyl)nickel (Ni(CH 3 C 5 H 4 ) 2 ), nickel dimethylglyoximate (Ni(dmg) 2 ), nickel 2-amino-pent-2-en-4-onato (Ni(apo) 2 ), Ni(dmamb) 2 (in which dmamb=1-dimethylamino-2-methyl-2-butanolate), Ni(dmamp) 2 (in which dmamp=1-dimethylamino-2-methyl-2-propanolate), Bis(pentamethylcyclopentadienyl)nickel (Ni(C 5 (CH 3 ) 5 ) 2 ) or nickel carbonyl (Ni(CO) 4 ), or any combination thereof, in a gaseous state.
13. The method of claim 12 , wherein the film of correlated electron material comprises an electron back-donating material in an atomic concentration of between 0.1% and 10.0%.
14. The method of claim 13 , wherein the electron back-donating material comprises carbonyl.
15. The method of claim 12 , further comprising purging the chamber of the first precursor for between 0.5 seconds and 180.0 seconds.
16. The method of claim 12 , wherein the exposing the substrate to the first precursor occurs over a duration of between 0.5 seconds and 180.0 seconds.
17. The method of claim 12 , further comprising repeating the exposing of the substrate between 50 and 900 times.
18. The method of claim 12 , further comprising repeating the exposing of the substrate until a thickness of the film of correlated electron material reaches between 1.5 nm and 150.0 nm.
19. The method of claim 12 , wherein the second precursor comprises oxygen (O 2 ), ozone (O 3 ), water (H 2 O), nitric oxide (NO), nitrous oxide (N 2 O) or hydrogen peroxide (H 2 O 2 ), or any combination thereof.
20. The method of claim 12 , wherein the exposing of the substrate to the first precursor, the exposing of the substrate to a second precursor, or any combination thereof, occurs at a temperature of between 20.0° and 1000.0° C.
21. The method of claim 12 , additionally comprising annealing the exposed substrate in the chamber.
22. The method of claim 21 , further comprising raising the temperature of the chamber to between 20.0° C. and 900.0° C. prior to initiating the annealing.
23. The method of claim 21 , wherein the exposed substrate is annealed in an environment comprising gaseous nitrogen (N 2 ), hydrogen (H 2 ), oxygen (O 2 ), water or steam (H 2 O), nitric oxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), ozone (O 3 ), argon (Ar), helium (He), ammonia (NH 3 ), carbon monoxide (CO), methane (CH 4 ), acetylene (C 2 H 2 ), ethane (C 2 H 6 ), propane (C 3 H 8 ), ethylene (C 2 H 4 ) or butane (C 4 H 10 ), or any combination thereof.