Method for stacking electronic components

1. A method of forming an electronic device comprising:

forming a stacked electronic component by:

providing a multiplicity of electronic components wherein each electronic component of said electronic components comprises a first external termination and a second external termination;

providing a first lead frame plate and a second lead frame plate wherein said first lead frame plate and said second lead frame plate comprises barbs and leads;

providing a molded case comprising a cavity, an open top and a bottom; and

forming a sandwich of said electronic components in an array between said first lead frame plate and said second lead frame plate with said barbs protruding towards said electronic components and said leads extending from said open top and through said bottom;

placing said stacked electronic component on a circuit board; and

passing said circuit board through an infra-red reflow oven, or infra-red/convection reflow oven, or a convection oven, or exposed to hot bar reflow or flame reflow heat sufficient to melt a low temperature metal to enhance electrical connection of the device.

2. The method of forming an electronic device of claim 1 further comprising:

forming said array of said electronic components prior to said forming of said sandwich.

3. The method of forming an electronic device of claim 1 further comprising:

inserting at least one of said first lead frame plate and said second lead frame plate in said cavity prior to forming said sandwich.

4. The method of forming an electronic device of claim 1 further comprising:

forming said sandwich of said electronic components in said array between said first lead frame plate and said second lead frame plate with said barbs protruding towards said electronic components; and

inserting said sandwich into said cavity wherein said leads extend through said bottom.

5. The method of forming an electronic device of claim 1 wherein at least one said electronic component is a multilayered ceramic capacitor.

6. The method of forming an electronic device of claim 5 wherein said multilayered ceramic capacitor is terminated with at least one material selected from copper film, plated nickel and plated gold.

7. The method of forming an electronic device of claim 5 wherein said multilayered ceramic capacitor comprises a base metal electrode.

8. The method of forming an electronic device of claim 5 wherein said multilayered ceramic capacitor comprises a precious metal electrode.

9. The method of forming an electronic device of claim 8 wherein said precious metal electrode comprises a material selected from a group consisting of silver, palladium, gold and platinum.

10. The method of forming an electronic device of claim 5 wherein each said electronic component is a multilayered ceramic capacitor.

11. The method of forming an electronic device of claim 5 wherein at least one said electronic component is selected from a group consisting of resistors, thermistors, inductors, fuses, diodes, and varistors.

12. The method of forming an electronic device of claim 5 wherein said multilayered ceramic capacitor comprises a dielectric selected from a group consisting of calcium-zirconate or calcium strontium zirconate titanate or barium titanate.

13. The method of forming an electronic device of claim 5 wherein said multilayered ceramic capacitor has a length of at least 1 mm to no more than 100 mm.

14. The method of forming an electronic device of claim 13 wherein said multilayered ceramic capacitor has a length of at least 3 to no more than 20 mm.

15. The method of forming an electronic device of claim 1 wherein said sandwich does not comprise an adhesive between said electronic component and said first lead frame plate.

16. The method of forming an electronic device of claim 1 wherein at least one said electronic component is a multilayered ceramic capacitor and said method further comprises forming a sintered silver undercoat on said multilayered ceramic capacitor.

17. The method of forming an electronic device of claim 1 wherein said lead frame plates are coated with a nickel barrier layer and a gold or other high temperature-resistant plating layer (Pd/Ag, Ag, etc.).

18. The method of forming an electronic device of claim 1 wherein said first lead frame plate comprises a material selected from a group consisting of nickel iron alloys, phosphor bronze alloys and beryllium copper alloys.

19. The method of forming an electronic device of claim 1 wherein said first lead frame plate has a thickness of between 0.1 mm-0.6 mm.

20. The method of forming an electronic device of claim 1 wherein said barbs protrude at least 0.1 to no more than 0.8 mm.

21. The method of forming an electronic device of claim 1 wherein said barbs are at an 5°-30° inward bend angle sloping in a downward direction towards said leads.

22. The method of forming an electronic device of claim 1 wherein said molded case comprises a material selected from a group consisting of polyimide, polysulfone, FR4, ceramic or glass.

23. The method of forming an electronic component of claim 1 wherein said molded case comprises a material with a Tg of greater than 175° C.

24. The method of forming an electronic device of claim 1 wherein said molded case has a wall thickness of at least 1.0 mm to no more than 10 mm.

25. The method of forming an electronic device of claim 24 wherein said molded case has a wall thickness of no more than 4.0 mm.

26. The method of forming an electronic device of claim 1 comprising no more than 320 of said electronic components.

27. The method of forming an electronic device of claim 1 wherein said molded case further comprises internal dividers in said cavity.

28. The method of forming an electronic device of claim 1 further comprising adding a cover over said to fully encapsulate said electronic components.