Clamped avalanche photodiode
An avalanche photodiode device operated in Geiger-mode, the device comprising a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode. The device further comprising a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region. Additionally comprising a diode on the second semiconductor region and having a turn-on voltage than the P-N junction.
1. An avalanche photodiode device operating in Geiger-mode, the device comprising:
a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and a cathode;
a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region; and
a clamp diode on the second semiconductor region and having a turn-on voltage lower than the P-N junction.
2. The device of claim 1 , wherein the clamp diode is a Schottky diode.
3. The device of claim 1 , wherein the first semiconductor region is N-type.
4. The device of claim 1 , wherein the substrate is from the group silicon, germanium, or indium phosphide.
5. The device of claim 1 , wherein the clamp diode is in electrical communication with the third semiconductor region via a metal interconnect layer.
6. The device of claim 1 , wherein the clamp diode is in electrical contact with the third semiconductor region via wire bonding.
7. The device of claim 1 , wherein the diode turn-on voltage is optimized to reduce dead time, afterpulsing, latchup, or combinations thereof.
8. The device of claim 1 , wherein the diode has a potential applied.
9. The device of claim 8 , wherein the potential is modulated.
10. The device of claim 1 , further comprising an isolation barrier.
11. The device of claim 10 , wherein the isolation barrier is a trench.
12. The device of claim 1 , wherein the substrate is back thinned.
13. The device of claim 1 , wherein the substrate has a coating.
14. The device of claim 13 , wherein the coating is a reflective, bandpass, shortpass, longpass, u-coating, v-coating, angle dependent coating, or laser-line coating.
15. The device of claim 1 , wherein a diffractive pattern is incorporated on a surface of the device to direct radiation entering the device at oblique angles to cause total internal reflection within the device.
16. An avalanche photodiode device operating in Geiger-mode, the device comprising:
An array of individual P-N junctions formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and a cathode;
a respective third semiconductor region, for each of the individual P-N junctions, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region; and
a respective clamp diode for each of the individual P-N junctions, wherein each of the clamp diodes are on each of the respective individual second semiconductors region and in electrical communication with the third semiconductor regions and each of the clamp diodes have a voltage drop than the P-N junction.
17. The device of claim 16 , wherein the substrate has a coating that is reflective, bandpass, shortpass, longpass, u-coating, v-coating, angle dependent coating, or laser-line coating.
18. The device of claim 17 , wherein the coating is different for at least two devices of the plurality of the array.
19. The device of claim 16 , wherein the clamp diode is a Schottky diode.
20. The device of claim 1 , wherein the clamp diode turn-on voltage is optimized to reduce dead time, after pulsing, latchup, or combinations thereof.