Method for single crystal growth of photovoltaic perovskite material and devices
Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.
1. A process for growing a perovskite single crystal, comprising:
generating a temperature gradient of at least 20° C. in a perovskite precursor solution; and
positioning a substrate in the precursor solution at a cooler portion of the perovskite precursor solution where the temperature is cooler than at a warmer portion of the perovskite precursor solution due to the temperature gradient, the substrate having a first end extending within the perovskite precursor solution toward the warmer portion of the perovskite precursor,
wherein a perovskite single crystal nucleates and grows on the substrate proximal to the first end of the substrate to form a large-size perovskite single crystal.
2. The process of claim 1 , further comprising cooling a distal end of the substrate external to the perovskite precursor solution.
3. The process of claim 1 , wherein the perovskite precursor solution in the cooler portion is supersaturated.
4. The process of claim 1 , wherein the precursor solution is contained within a container, wherein at least a bottom portion of the container is within a heated fluid bath, and wherein the at least one small perovskite crystal is placed proximal to the bottom portion of the container which corresponds to the warmer portion of the perovskite precursor solution.
5. The process of claim 1 , wherein the warmer portion of the perovskite precursor solution is at a temperature of about 40° C. to about 200° C., and wherein the cooler portion of the perovskite precursor solution is at a temperature of about 20° C. to about 130° C.
6. The process of claim 1 , wherein the perovskite single crystal is a perovskite having a structure of AMX 3 , wherein A is methylammonium (CH 3 NH 3 +), Cs+ or formamidinum (H 2 NCHNH 2 +), M is a metal cation, and X is a halide anion thiocyanate (SCN—) or mixture of them.
7. The process of claim 4 , further including placing at least one perovskite single crystal, or perovskite powders in the perovskite precursor solution at the warmer portion of the perovskite precursor solution where the temperature is higher than at the cooler portion of the perovskite precursor solution due to the temperature gradient.
8. The process of claim 6 , wherein the metal cation is Pb 2 +, and wherein the halide ion is one of I—, Cl—, Br— or a mixture thereof.
9. A perovskite crystal photovoltaic device having a lateral electrode structure, comprising:
a perovskite single crystal defining a planar perovskite layer;
a first electrode disposed on a first side of the planar perovskite layer; and
a second electrode disposed on the first side of the planar perovskite, wherein the second electrode is displaced from the first electrode along a planar direction defined by the planar perovskite layer, such that when activated by illumination impinging on the perovskite single crystal, a charge flows in the perovskite single crystal along the planar direction between the first and second electrodes.
10. The device of claim 9 , wherein the perovskite single crystal has a structure of AMX 3 , wherein A is methylammonium (CH 3 NH 3 +), M is a metal cation, and X is a halide anion.
11. The device of claim 9 , wherein the first electrode and the second electrode are both non-transparent to the illumination impinging on the perovskite single crystal.
12. The device of claim 9 , further comprising a substrate layer covering at least one of the first electrode or the second electrode.
13. The device of claim 9 , further comprising a substrate layer covering both of the first electrode and the second electrode.
14. The device of claim 9 , wherein the perovskite single crystal has a thickness between about 100 nm and about 1 cm.
15. The device of claim 9 , wherein the first electrode is parallel to the second electrode and wherein an electric field is applied to the perovskite crystal layer to produce a p-i-n structure.
16. The device of claim 9 , wherein the first electrode and the second electrode comprise different materials.
17. A perovskite single crystal radiation detector device, comprising:
a perovskite single crystal;
a first electrode disposed on a first surface of the perovskite single crystal; and
a second electrode disposed on the first surface of the perovskite single crystal,
wherein the perovskite single crystal has a thickness of less than about 3 cm between the first side and the second side, and wherein the perovskite single crystal has a diffusion length of about 3 mm or greater.
18. The device of claim 17 , wherein the thickness of the perovskite single crystal is between about 1 μm and about 1 cm.
19. The device of claim 17 , wherein the perovskite single crystal is a perovskite having a structure of AMX 3 , wherein A is methylammonium (CH 3 NH 3 +), Cs+ or formamidinum (H 2 NCHNH 2 +), M is a metal cation, and X is a halide anion, thiocyanate (SCN—) or mixture of them.