Systems and methods for scalable perovskite device fabrication

1. A process for fabricating a perovskite device, comprising:

receiving a substrate;

applying a perovskite precursor solution onto the substrate;

linearly swiping the perovskite precursor solution using a doctor blade to form a perovskite device including a perovskite film on the substrate;

heating the perovskite device; and

rolling a conductive tape onto the perovskite device, wherein the conductive tape includes an adhesive material and a conductive material.

2. The process of claim 1 , further comprising:

simultaneously heating the substrate while applying and linearly swiping the perovskite precursor solution.

3. The process of claim 1 , wherein the substrate is moving and the doctor blade is stationary.

4. The process of claim 1 , wherein the substrate is moving at a rate of about 0.75 to about 75 cm/sec relative to the doctor blade.

5. The process of claim 1 , wherein the substrate is stationary and wherein the doctor blade moves relative to the substrate.

6. The process of claim 1 , wherein applying the perovskite precursor solution onto the substrate includes dispensing between about 10 μL and about 20 μL of perovskite precursor solution for every 2.25 mm 2 of substrate.

7. The process of claim 1 , wherein the precursor solution includes a lead halide and at least one of a methylammonium halide or a formamidinium halide dissolved in dimethylformamide (DMF) or Methyl sulfoxide (DMSO).

8. The process of claim 1 , wherein the substrate comprises indium tin oxide (ITO) or other transparent conductive electrode material.

9. The process of claim 1 , wherein heating the perovskite device includes heating the perovskite device to a temperature between about 50° C. and about 175° C.

10. The process of claim 1 , wherein the substrate comprises indium tin oxide (ITO) or other transparent conductive electrode material.

11. The process of claim 2 , wherein heating the substrate includes heating the substrate to a temperature in a range of between about 50° C. and about 180° C.

12. The process of claim 11 , wherein heating the substrate includes heating the substrate to about 125° C.

13. A process for continuously laminating a perovskite device, comprising:

forming a perovskite device by doctor blade coating a perovskite precursor solution onto a substrate;

heating the perovskite device; and

rolling a conductive tape onto the perovskite device, wherein the conductive tape includes an adhesive material and a conductive material.

14. The process of claim 13 , wherein heating the perovskite device includes heating the perovskite device to a temperature between about 50° C. and about 175° C.

15. The process of claim 13 , wherein the conductive material includes at least one of aluminum, copper, nickel, gold, or silver.

16. A process for fabricating perovskite device, comprising:

heating an indium tin oxide (ITO) substrate;

applying a perovskite precursor solution onto the ITO substrate;

linearly swiping the perovskite precursor solution using a doctor blade to form a perovskite film;

simultaneously thermoannealing and solvent annealing the perovskite film;

depositing a charge transport layer on the perovskite film;

thermoannealing the charge transport layer;

depositing a fullerene layer on the charge transport layer; and

applying a conductive layer to the fullerene layer.

17. The process of claim 16 , wherein the ITO substrate includes an ITO layer and a hole transport layer.

18. The process of claim 16 , wherein the precursor solution includes a lead halide (PbI 2 , PbBr 2 or PbCl 2 ) and at least one of methylammonium halide (CH 3 NH 3 I, CH 3 NH 3 Br, CH 3 NH 3 Cl) or formamidinium halide (CH(NH 2 ) 2 I, CH(NH 2 ) 2 Br, CH(NH 2 ) 2 Cl) dissolved in dimethylformamide (DMF) or Methyl sulfoxide (DMSO) or a mixture thereof in any ratio.

19. The process of claim 17 , wherein the hole transport layer includes at least one of PEDOT:PSS, TPD plus TPACA or PTAA, or other hole transport material or materials.