Device substrate, method of manufacturing device substrate, and method of manufacturing semiconductor device
View Patent ↗According to one embodiment, a device substrate includes a multilayer film that includes a film constituting a device element and is disposed on a substrate. A main face on which the device element is disposed includes a patterning region on which a resist is to be applied during an imprint process, and a bevel region provided as a region from a peripheral edge portion of the patterning region to an end portion of the device substrate. The bevel region includes a region where an upper surface of the bevel region becomes lower toward the end portion of the device substrate relative to an upper surface of the patterning region. The upper surface of the bevel region has an inclination angle of 10° or more and 90° or less with respect to the upper surface of the patterning region, at a boundary between the patterning region and the bevel region.
1. A device substrate comprising a multilayer film that is disposed on a semiconductor wafer, wherein
a main face of the device substrate on which the multilayer film is disposed includes
a patterning region on which a resist is to be applied, and
a bevel region provided as a region from a peripheral edge portion of the patterning region to an end portion of the device substrate,
the multilayer film on the patterning region includes a mask film that is an uppermost layer film of the multilayer film,
the multilayer film on the bevel region does not include the mask film that is the uppermost layer film of the multilayer film which presents on the patterning region,
the bevel region includes the region where an upper surface of the bevel region becomes lower toward the end portion of the device substrate relative to an upper surface of the patterning region, and
the upper surface of the multilayer film that does not include the mask film on the bevel region has an inclination angle of 10° or more and 90° or less with respect to the upper surface of the multilayer film in which the uppermost layer film is the mask film on the patterning region, at a boundary between the patterning region and the bevel region.
2. The device substrate according to claim 1 , wherein the upper surface of the patterning region is flat.
3. The device substrate according to claim 1 , wherein a distance from the peripheral edge portion of the patterning region to the end portion of the device substrate is 3 mm or less.
4. The device substrate according to claim 1 , wherein the mask film is formed of a carbon film.
5. The device substrate according to claim 1 , wherein the semiconductor wafer is formed of a wafer.