Semiconductor memory device and method for manufacturing the same

1. A semiconductor memory device comprising:

a first stacked body including a plurality of conductive layers arranged along a first direction;

a pillar extending through the first stacked body in the first direction;

a memory film provided between the pillar and the first stacked body;

a capacitive element including a first conductive member and a second conductive member, and the capacitive element being arranged in a line with the pillar in a direction crossing the first direction;

a first wiring electrically connected to the first conductive member; and

a second wiring electrically connected to the second conductive member,

a first length of the first conductive member in the first direction being longer than a second length of the first conductive member in a second direction crossing the first direction, a third length of the first conductive member in a third direction being longer than the second length, and the first length being longer than a length between a top layer of the conductive layers of the first stacked body and a bottom layer of the conductive layers of the first stacked body in the first direction, the third direction crossing the first direction and the second direction, and

a fourth length of the second conductive member in the first direction being longer than a fifth length of the second conductive member in the second direction, a sixth length of the second conductive member in the third direction being longer than the fifth length, and the fourth length being longer than a length of the first stacked body in the first direction.

2. The device according to claim 1 , further comprising:

a third conductive member provided in the first stacked body, and the third conductive member electrically connected to the pillar,

wherein a seventh length of the third conductive member in the first direction is longer than an eighth length of the third conductive member in the second direction, and a ninth length of the third conductive member in the third direction is longer than the eighth length.

3. The device according to claim 1 , wherein

the first wiring is a first power supply line,

the second wiring is a second power supply line, and

a potential of the second wiring is higher than a potential of the first wiring.

4. The device according to claim 1 , further comprising:

a fourth conductive member connected to one of the conductive layers, and extending in the first direction,

wherein the fourth conductive member includes a material included in the first conductive member and the second conductive member.

5. The device according to claim 1 , wherein

a part of the first stacked body is located between the capacitive element and the pillar.

6. The device according to claim 1 , further comprising:

an insulating layer provided in a periphery of the first conductive member and a periphery of the second conductive member,

wherein a part of the insulating layer is provided between the first conductive member and the second conductive member.

7. The device according to claim 6 , further comprising:

a first intermediate film provided between the first conductive member and the insulating layer; and

a second intermediate film provided between the second conductive member and the insulating layer.

8. The device according to claim 6 , wherein

a tenth length of the insulating layer in the first direction between the first conductive member and the second conductive member is longer than an eleventh length of the insulating layer in the second direction between the first conductive member and the second conductive member, and a twelfth length of the insulating layer in the third direction between the first conductive member and the second conductive member is longer than the eleventh length in the second direction between the first conductive member and the second conductive member.

9. The device according to claim 1 , further comprising:

a substrate; and

an insulating section,

wherein the first stacked body, the pillar, and the capacitive element are disposed on the substrate, and

the insulating section is disposed between the substrate and the capacitive element.

10. The device according to claim 1 , further comprising:

a substrate including

a first semiconductor region having a first conductivity type, and electrically connected to the first conductive member, and

a second semiconductor region having a second conductivity type, and electrically connected to the second conductive member.

11. The device according to claim 1 , further comprising:

a second stacked body provided in a periphery of the first conductive member and a periphery of the second conductive member,

wherein the second stacked body includes:

a plurality of first insulating layers arranged along the first direction so as to be spaced from each other, and

a plurality of second insulating layers respectively provided between the first insulating layers.

12. The device according to claim 11 , wherein

the first insulating layers include silicon nitride, and

the second insulating layers include silicon oxide.

13. The device according to claim 11 , further comprising:

a first intermediate film provided between the first conductive member and the second stacked body; and

a second intermediate film provided between the second conductive member and the second stacked body.