IP Library Granted Patent US 10,224,150
Granted Patent B2
US 10,224,150 · App. 15/013,171 · Granted Mar 5, 2019

Solid electrolytic capacitor with enhanced humidity resistance and method for producing the same

Inventors: Liancai Ning (Jiangsu, CN); Qun Ya (Jiangsu, CN)
Assignee: KEMET Electronics Corporation
H01G9/0425C23C2/00H01G9/0032H01G9/0036H01G9/012H01G9/028H01G9/07H01G9/15
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Quick Facts
Patent No.
US 10,224,150
App. No.
15/013,171
Granted
Mar 5, 2019
Kind
B2
Abstract

An improved capacitor is provided. The capacitor comprises an anode and a functional dielectric on said anode and a conductive layer on the functional dielectric. An anode wire extends from said anode wherein the anode wire has a thickened dielectric layer thereon.

Claims (50)

1. A capacitor comprising:

an anode;

a functional dielectric on said anode;

a conductive layer on said functional dielectric;

an anode wire extending from said anode wherein said anode wire has a thickened dielectric region thereon; and

wherein said thickened dielectric region has a thickness of at least 1.1-10.0 times the thickness of said functional dielectric.

2. The capacitor of claim 1 wherein said anode comprises a valve metal or a conductive oxide of a valve metal.

3. The capacitor of claim 2 wherein said anode comprises a valve metal selected from the group consisting of tantalum, aluminum, niobium, titanium, zirconium and hafnium.

4. The capacitor of claim 1 wherein said thickened dielectric region has a thickness of at least 2-8 times the thickness of said functional dielectric.

5. The capacitor of claim 1 wherein said functional dielectric is an oxide of said anode.

6. The capacitor of claim 1 wherein said conductive layer comprises a conductive polymer.

7. The capacitor of claim 6 wherein said conductive polymer is selected from the group consisting of polythiophene, polypyrrole and polyaniline.

8. The capacitor of claim 7 wherein said conductive polymer comprises polymerized 3,4-ethylenedioxythiophene.

9. The capacitor of claim 6 further comprising a blocking polymer on said thickened dielectric.

10. The capacitor of claim 9 wherein said blocking polymer has lower conductivity than said conductive polymer.

11. A method for forming a capacitor comprising:

pressing and sintering a metal to form an anode with an anode wire extending therefrom;

forming a functional dielectric on said anode;

forming a conductive layer on said functional dielectric;

forming a thickened dielectric region on said anode wire; and

cleaning said anode wire prior to said forming said thickened dielectric region.

12. The method for forming a capacitor of claim 11 further comprising applying a blocking polymer on said thickened dielectric.

13. The method for forming a capacitor of claim 12 wherein said blocking polymer has a lower conductivity than said conductive layer.

14. The method for forming a capacitor of claim 11 wherein said anode comprises a valve metal or a conductive oxide of a valve metal.

15. The method for forming a capacitor of claim 14 wherein said anode comprises a valve metal selected from the group consisting of tantalum, aluminum, niobium, titanium, zirconium and hafnium.

16. The method for forming a capacitor of claim 11 wherein said thickened dielectric region has a thickness of at least 1.1-10.0 times the thickness of said functional dielectric.

17. The method for forming a capacitor of claim 16 wherein said thickened dielectric region has a thickness of at least 2-8 times the thickness of said functional dielectric.

18. The method for forming a capacitor of claim 11 wherein said functional dielectric is an oxide of said anode.

19. The method for forming a capacitor of claim 11 wherein said conductive layer comprises a conductive polymer.

20. The method for forming a capacitor of claim 19 wherein said conductive polymer is selected from the group consisting of polythiophene, polypyrrole and polyaniline.

21. The method for forming a capacitor of claim 20 wherein said conductive polymer comprises polymerized 3,4-ethylenedioxythiophene.

22. The method for forming a capacitor of claim 11 further comprising a blocking polymer on said thickened dielectric.

23. The method for forming a capacitor of claim 22 wherein said blocking polymer has lower conductivity than said conductive polymer.

24. A method for forming a capacitor comprising:

pressing and sintering a metal to form an anode with an anode wire extending therefrom;

forming a functional dielectric on said anode;

forming a conductive layer on said functional dielectric; and

forming a thickened dielectric region on said anode wire wherein said forming of said thickened dielectric region comprises applying a forming electrolyte to said anode wire in the presence of applied voltage.

25. A method for forming a capacitor comprising:

pressing and sintering a metal to form an anode with an anode wire extending therefrom;

forming a functional dielectric on said anode;

forming a conductive layer on said functional dielectric; and

forming a thickened dielectric region on said anode wire by applying an applied voltage wherein said applied voltage is higher than a formation voltage.

26. A method for forming a capacitor comprising:

pressing and sintering a metal to form an anode with an anode wire extending therefrom;

forming a functional dielectric on said anode;

forming a conductive layer on said functional dielectric; and

forming a thickened dielectric region on said anode wire by applying a forming electrolyte wherein said applying of said forming electrolyte comprises a conductive nozzle.

27. The method for forming a capacitor of claim 26 wherein said conductive nozzle comprises a metal syringe.

28. The method for forming a capacitor of claim 24 wherein said applying said forming electrolyte comprises pressure.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: BANK OF AMERICA, N.A.
To: KEMET CORPORATION,; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
Reel/Frame 047450/0926 →
SECURITY AGREEMENT Recorded May 22, 2017
From: KEMET CORPORATION; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 042523/0639 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 2, 2016
From: NING, LIANCAI; YA, QUN
To: KEMET ELECTRONICS CORPORATION
Reel/Frame 037643/0926 →
Continuity (1)
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