Semiconductor package with integrated output inductor on a printed circuit board
A semiconductor package includes a semiconductor die comprising a control transistor and a sync transistor, an integrated output inductor comprising a winding 1 around a core, and coupled to the semiconductor die. The winding comprises a plurality of conductive clips situated above a printed circuit board (PCB) and connected to a plurality of conductive segments in the PCB. The control transistor and the sync transistor are configured as a half-bridge. The integrated output inductor is coupled to a switched node of the half-bridge. At least one of the plurality of conductive clips includes a partially etched portion and a non-etched portion. The semiconductor die is attached to the integrated output inductor by a die attach material. The semiconductor die and the integrated output inductor are encapsulated in a molding compound.
1. A semiconductor package comprising:
a semiconductor die comprising a control transistor and a sync transistor;
an integrated output inductor comprising a winding around a core, and coupled to said semiconductor die;
wherein said winding comprises a plurality of conductive clips situated above a printed circuit board (PCB) and connected to a plurality of conductive segments in said PCB.
2. The semiconductor package of claim 1 wherein said control transistor and said sync transistor are configured as a half-bridge.
3. The semiconductor package of claim 2 wherein said integrated output inductor is coupled to a switched node of said half-bridge.
4. The semiconductor package of claim 1 wherein at least one of said plurality of conductive clips includes a partially etched portion and a non-etched portion.
5. The semiconductor package of claim 1 wherein said semiconductor die further comprises a driver integrated circuit coupled to said control transistor and said sync transistor.
6. The semiconductor package of claim 1 wherein at least one of said control transistor and said sync transistor comprises a group III-V transistor.
7. The semiconductor package of claim 1 wherein at least one of said control transistor and said sync transistor comprises a group IV transistor.
8. The semiconductor package of claim 1 wherein said core is a ferrite core.
9. The semiconductor package of claim 1 wherein said semiconductor die is situated over and attached to said integrated output inductor by a die attach material.
10. The semiconductor package of claim 1 wherein said semiconductor die and said integrated output inductor are encapsulated in a molding compound.
11. A semiconductor package comprising:
an integrated output inductor comprising a winding around a core;
a power stage stacked over said integrated output inductor, said power stage comprising a control transistor and a sync transistor connected in a half-bridge;
wherein said winding comprises a plurality of conductive clips situated above a printed circuit board (PCB) and connected to a plurality of conductive segments in said PCB.
12. The semiconductor package of claim 11 wherein at least one of said plurality of conductive clips includes a partially etched portion and a non-etched portion.
13. The semiconductor package of claim 11 wherein said integrated output inductor is coupled to a switched node of said half-bridge.
14. The semiconductor package of claim 11 wherein said power stage further comprises a driver integrated circuit coupled to said control transistor and said sync transistor.
15. The semiconductor package of claim 11 wherein said core is a ferrite core.
16. The semiconductor package of claim 11 wherein at least one of said control transistor and said sync transistor comprises a group III-V transistor.
17. The semiconductor package of claim 11 wherein at least one of said control transistor and said sync transistor comprises a group IV transistor.
18. The semiconductor package of claim 11 wherein said control transistor and said sync transistor are monolithically integrated on a semiconductor die.
19. The semiconductor package of claim 18 wherein said semiconductor die is attached to said integrated output inductor by a die attach material.
20. The semiconductor package of claim 11 wherein said power stage and said integrated output inductor are encapsulated in a molding compound.