SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS
A semiconductor manufacturing method according to an embodiment includes forming a first film on a semiconductor substrate. The semiconductor manufacturing method includes forming cavities in the first film. The semiconductor manufacturing method includes forming a second film inside the cavities by a CVD method using first gas containing a component of the second film, detecting a first time point at which the second film blocks openings of the cavities in forming the second film, and ending forming of the second film at a second time point at which a predetermined time has elapsed from the first time point.
1 . A semiconductor manufacturing method comprising:
forming a first film on a semiconductor substrate;
forming cavities in the first film; and
forming a second film inside the cavity by a CVD method using first gas comprising a component of the second film, detecting a first time point at which the second film blocks openings of the cavities in forming the second film, and ending forming of the second film at a second time point at which a predetermined time has elapsed from the first time point.
2 . The method of claim 1 , further comprising detecting an amount of byproducts generated in forming the second film, wherein
detecting the first time point is detecting a time point at which the amount of byproducts has decreased.
3 . The method of claim 2 , wherein the byproduct is second gas differing from the first gas.
4 . The method of claim 3 , wherein detecting the amount of byproducts is detecting an amount of the second gas in discharge gas used for forming the second film.
5 . The method of claim 1 , being a manufacturing method of a three-dimensionally stacked semiconductor storage device, wherein
the first film is a stacked film in which silicon oxide films and silicon nitride films are stacked alternately.
6 . The method of claim 5 , further comprising forming a recess that penetrates the stacked film before forming the cavities, wherein
forming the cavities is removing the silicon nitride films in respective layers selectively by bringing a chemical liquid into contact with the silicon nitride films in respective layers through the recess.
7 . The method of claim 6 , wherein the second film is word lines of the semiconductor storage device.
8 . The method of claim 7 , wherein the second film contains tungsten.
9 . The method of claim 6 , wherein
forming the second film is performed from inside of the cavities in respective layers that are formed based on the stacked film to a sidewall of the recess, and
the method further comprising separating parts of the second film that are formed inside the cavities in respective layers from each other by removing parts of the second film that are formed on a sidewall of the recess after forming the second film.
10 . A semiconductor manufacturing apparatus comprising:
a reactor housing a semiconductor substrate having a first film including cavities and supplying first gas containing a component of a second film to the semiconductor substrate to form the second film inside of the cavities;
a first detector detecting a first time point at which the second film blocks openings of the cavities; and
a controller executing control to stop supply of the first gas at a second time point at which a predetermined time has elapsed from the first time point.
11 . The apparatus of claim 10 , further comprising a second detector detecting an amount of byproducts in the reactor, wherein
the first detector detects a time point at which the amount of byproducts has decreased as the first time point.
12 . The apparatus of claim 11 , wherein the second detector detects an amount of second gas differing from the first gas as the amount of byproducts.
13 . The apparatus of claim 12 , wherein the second detector is arranged on a discharge line of the reactor.
14 . The apparatus of claim 10 , manufacturing a three-dimensionally stacked semiconductor storage device, wherein
the first film including the cavities has a plurality of layers of silicon oxide films and the cavities are located between the silicon oxide films in the respective layers.
15 . The apparatus of claim 14 , wherein the second film is word lines of the semiconductor storage device.
16 . The apparatus of claim 15 , wherein the second film comprises tungsten.
17 . The apparatus of claim 14 , wherein
the semiconductor substrate has a recess that penetrates the stacked film so as to be communicated with the cavities, and
the reactor forms the second film extending from the inside of the cavities to a sidewall of the recess.