Alignment method, pattern formation system, and exposure device
According to one embodiment, an alignment method includes calculating a position gap of a predetermined point in a device area of a wafer based on a stress applied to the device area, and correcting an exposure condition in a lithography process of the device area based on the position gap of the predetermined point.
1. A pattern formation system, comprising:
a patterning device that forms a pattern on a wafer in a device area;
a misalignment checking device that checks a misalignment between superposition checking marks on the wafer; and
a host computer that is connected to the patterning device and the misalignment checking device, wherein
the host computer includes:
a position gap calculation unit that calculates a position gap of a predetermined point in the device area and a position gap of the superposition checking marks, based on a stress applied to the device area of the wafer; and
a correction value calculation unit that calculates a correction value for a control parameter in a patterning process of the device area, based on the position gap of the predetermined point in the device area and the position gap of the superposition checking marks, and
the patterning device includes a position gap compensation unit that sets the control parameter in the patterning process of the device area based on the correction value.
2. The pattern formation system of claim 1 , further comprising a surface shape measurement device that measures the surface shape of the wafer, wherein
the host computer further includes a stress calculation unit that calculates the stress applied to the device area of the wafer based on the surface shape of the wafer.
3. The pattern formation system claim 1 , further comprising a stress measurement device that measures the stress applied to the device area of the wafer.
4. An exposure device, comprising:
a stage on which a wafer is placed;
a projection optical system that projects exposure light onto the wafer;
a scan control unit that moves the stage and a reticle in synchronization to scan the wafer with exposure light;
a stress measurement device that measures a stress applied to a device area of the wafer;
a position gap calculation unit that calculates a position gap of a predetermined point in the device area based on the stress; and
a position gap compensation unit that performs, based on the position gap, an exposure control in a lithography process of the device area.
5. The exposure device of claim 4 , wherein the position gap compensation unit performs the exposure control in the lithography process of the device area, based on an amount of deformation or distortion of a pattern in the device area calculated based on the stress applied to the device area of the wafer.
6. The exposure device of claim 5 , wherein a parameter for the exposure control is changed according to a scan position of the exposure light.
7. The exposure device of claim 5 , wherein at least one of a scan speed of the stage relative to the reticle, an inclination of the stage relative to the reticle, a rotation angle of the stage relative to the reticle, and a magnification ratio of a pattern projected onto the wafer by the exposure light, is changed according to a scan position of the exposure light.
8. An exposure device, comprising:
a stage on which a wafer is placed;
a projection optical system that projects exposure light onto the wafer;
a scan control unit that moves the stage and a reticle in synchronization to scan the wafer with exposure light;
a surface shape measurement device that measures a surface shape of the wafer;
a stress calculation unit that calculates a stress applied to a device area of the wafer based on the surface shape;
a position gap calculation unit that calculates a position gap of a predetermined point in the device area base on the stress; and
a position gap compensation unit that performs, based on the position gap, an exposure control in a lithography process of the device area.
9. The exposure device of claim 8 , wherein the position gap compensation unit performs the exposure control in the lithography process of the device area, based on an amount of deformation or distortion of a pattern in the device area calculated based on the stress applied to the device area of the wafer.
10. The exposure device of claim 9 , wherein a parameter for the exposure control is changed according to a scan position of the exposure light.
11. The exposure device of claim 9 , wherein at least one of a scan speed of the stage relative to the reticle, an inclination of the stage relative to the reticle, a rotation angle of the stage relative to the reticle, and a magnification ratio of a pattern projected onto the wafer by the exposure light, is changed according to a scan position of the exposure light.