Light-emitting device
View Patent ↗A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; and an electrode comprising a surface next to the semiconductor system and comprising a base material and a contact material different from the base material, wherein the contact material diffuses into the semiconductor system; wherein the contact material has a largest intensity at a first depth position from a SIMS spectrum, and a distance between the first depth position and the surface is not less than 500 nm.
1. A light-emitting device, comprising:
a semiconductor system comprising a light-emitting semiconductor stack; and
an electrode comprising a surface next to the semiconductor system and comprising a base material and a contact material different from the base material, wherein the contact material diffuses into the semiconductor system;
wherein the contact material has a largest intensity at a first depth position from a SIMS spectrum, and a distance between the first depth position and the surface is not less than 500 nm.
2. The light-emitting device according to claim 1 , wherein the semiconductor system comprises a window layer on the light-emitting semiconductor stack, and the window layer comprises a contact material the same as the contact material in the electrode and comprises a base material the same as the base material in the electrode.
3. The light-emitting device according to claim 2 , wherein at a second depth position in a region of the window layer from the SIMS spectrum, the contact material in the window layer has a first intensity and the base material in the window layer has a second intensity.
4. The light-emitting device according to claim 3 , wherein the first intensity is larger than the second intensity.
5. The light-emitting device according to claim 2 , wherein the window layer comprises one element selected from the group consisting of Al, Ga, In, As, P, and N.
6. The light-emitting device according to claim 2 , wherein a part of an upper side of the window layer that is uncovered by the electrode is roughened.
7. The light-emitting device according to claim 1 , wherein the electrode further comprises a contact layer comprising a first layer and a second layer, and the first layer is between the second layer and the semiconductor system.
8. The light-emitting device according to claim 7 , wherein the first layer has a thickness not more than 300 nm.
9. The light-emitting device according to claim 7 , wherein the first layer has a thickness between 100 nm and 300 nm both included.
10. The light-emitting device according to claim 7 , wherein the second layer has a thickness larger than a thickness of the first layer.
11. The light-emitting device according to claim 7 , wherein the second layer has a thickness between 500 nm and 1500 nm both included.
12. The light-emitting device according to claim 7 , wherein the electrode further comprises a barrier layer on the contact layer.
13. The light-emitting device according to claim 12 , wherein the barrier layer has a thickness between 30 nm and 100 nm both included.
14. The light-emitting device according to claim 12 , wherein the barrier layer comprises Zn, W, Ni or Pt.
15. The light-emitting device according to claim 1 , wherein the base material has an intensity less than the largest intensity of the contact material at the first depth position from the SIMS spectrum.
16. The light-emitting device according to claim 1 , wherein the semiconductor system comprises the contact material.
17. The light-emitting device according to claim 1 , wherein the contact material has a reactivity higher than that of Pt.
18. The light-emitting device according to claim 1 , wherein the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof.
19. The light-emitting device according to claim 1 , wherein the electrode is devoid of Ti or/and Cr.