Control circuit and control method for turning on a power semiconductor switch

1. Control circuit for turning on a power semiconductor switch, comprising:

an input which is configured to receive a signal that characterizes the switch-on behavior of the power semiconductor switch;

a phase detection circuit which is configured to detect three or more phases in the course of the switch-on process of the power semiconductor switch based on the signal that characterizes a switch-on behavior of the power semiconductor switch, and to generate a phase detection signal, which indicates which of the three or more phases the power semiconductor switch is currently running through; and

a variable current source which is configured to supply a current with variable current strength to a control input of the power semiconductor switch in response to the phase detection signal, in order to switch on the power semiconductor switch,

wherein the control circuit is configured to control the variable current source in a closed control loop in response to the signal that characterizes the switch-on behavior of the power semiconductor switch,

wherein the current supplied to the control input of the power semiconductor switch has a first level in a first phase in the course of the switch-on process of the power semiconductor switch, wherein the current has a second level that is reduced from the first level in the course of a second phase in the course of the switch-on process of the power semiconductor switch, and wherein the current has a third level in a third phase in the course of the switch-on process of the power semiconductor switch, wherein the third level is lower than the first level and higher than the second level, wherein the first phase comes before the second phase, and wherein the second phase comes before the third phase.

2. Control circuit according to claim 1 , wherein the signal that characterizes a switch-on behavior of the power semiconductor switch is a control input voltage which is present at the control input of the power semiconductor switch.

3. Control circuit according to claim 2 , wherein the phase detection circuit comprises a peak timing detection circuit which is configured to identify a point in time of a peak in the signal that characterizes a switch-on behavior of the power semiconductor switch, and wherein the phase detection circuit is configured to detect a transition between two phases if the signal that characterizes the switch-on behavior of the power semiconductor switch reaches the peak.

4. Control circuit according to claim 1 , wherein the phase detection circuit identifies the three or more phases in the course of a switch-on process on the basis of characteristic features of the signal that characterizes a switch-on behavior of the power semiconductor switch.

5. Control circuit according to claim 1 , wherein the phase detection circuit contains one or a plurality of comparators, wherein each of the one or the plurality of comparators is configured to compare the signal that characterizes a switch-on behavior of the power semiconductor switch with one of one or more reference signals, and wherein the phase detection circuit detects transitions between one or a plurality of the phases in the course of a switch-on process of the power semiconductor switch if the signal that characterizes a switch-on behavior of the power semiconductor switch exceeds a respective reference signal.

6. Control circuit according to claim 1 , wherein the phase detection circuit is configured to detect at least four phases in the course of the switch-on process of the power semiconductor switch.

7. Control circuit according to claim 1 , wherein the variable current source comprises a plurality of parallel driver stages.

8. Control circuit according to claim 7 , wherein each of the plurality of driver stages is configured to amplify a predetermined input current by a specific factor.

9. Control circuit according to claim 8 , wherein the control circuit comprises a region having a higher voltage level and a region having a lower voltage level, and wherein an input current is supplied by a current source in the region having a lower voltage level, and wherein the predetermined input current is fed without additional level shifters into the region having a higher voltage level.

10. Control circuit according to claim 7 , wherein the driver stages comprise current mirror circuits.

11. Control circuit according to claim 1 , wherein the phase detection circuit comprises one or a plurality of level shifters which are configured to convert an internal signal that is output by one or a plurality of comparators from a high voltage level in the control circuit to a low voltage level in the control circuit.

12. Control circuit according to claim 1 , wherein the three or more phases in the course of a switch-on process of the power semiconductor switch are detected based on a control input voltage which is present at the control input of the power semiconductor switch, and additionally based on a voltage which is present across the power terminals of the power semiconductor switch.

13. Control circuit according to claim 1 , wherein a transconductance of the control circuit is altered in the course of the switch-on process of the power semiconductor switch.

14. Method for switching on a power semiconductor switch, comprising:

receiving a signal that characterizes the switch-on behavior of the power semiconductor switch;

detecting three or more phases in the signal that characterizes a switch-on behavior of the power semiconductor switch, wherein controlling a current to a control input of a power semiconductor switch comprises:

varying the current in response to detecting three or more phases in the signal that characterizes a switch-on behavior of the power semiconductor switch; and

controlling a current to a control input of a power semiconductor switch in a closed control loop based on the signal that characterizes a switch-on behavior of the power semiconductor switch in order to switch on the power semiconductor switch,

wherein the current to the control input of the power semiconductor switch has a first level in a first phase in a course of a switch-on process of the power semiconductor switch, wherein the current has a second level that is reduced from the first level in the course of a second phase in the course of the switch-on process of the power semiconductor switch, and wherein the current has a third level in a third phase in the course of the switch-on process of the power semiconductor switch, wherein the third level is lower than the first level and higher than the second level, wherein the first phase comes before the second phase, and wherein the second phase comes before the third phase.