METHOD FOR EXPOSING PHOTORESIST IN A MICROELECTRIC DEVICE
A method and system provide microelectric devices on fields on a substrate. Each field includes at least one microelectric device having a critical device feature and remaining device feature(s) distal from the critical device feature. The method and system include providing a photoresist layer for fabricating the microelectric devices and exposing the photoresist layer using a dark field mask. The dark field mask is for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the fields. The first portion includes not more than five percent of each field. The method and system further include exposing the photoresist layer using a clear field mask. The clear field mask is for defining remaining mask feature(s) corresponding to the remaining device feature(s). The clear field mask exposes a second portion of the fields that is different from the first portion.
1 . A method for providing a plurality of microelectric devices on a plurality of fields on a substrate, each of the plurality of fields including at least one microelectric device including a critical device feature and at least one remaining device feature distal from the critical device feature, the method comprising:
providing a layer of photoresist on the plurality of fields, the layer of photoresist for fabricating the plurality of microelectric devices;
exposing the layer of photoresist using a dark field mask, the dark field mask for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the plurality of fields, the first portion including not more than five percent of each of the plurality of fields; and
exposing the layer of photoresist using a clear field mask, the clear field mask for defining at least one remaining mask feature corresponding to the at least one remaining device feature, the clear field mask exposing a second portion of the plurality of fields, the second portion being different from the first portion.
2 . A method for providing a plurality of magnetic devices on a plurality of fields on a substrate, each of the plurality of fields including at least one magnetic device including at least one critical device feature and at least one remaining device feature distal from the critical device feature, the method comprising:
providing a layer of photoresist on the plurality of fields, the layer of photoresist having a thickness of at least one micron, the layer of photoresist for fabricating the plurality of magnetic devices;
exposing the layer of photoresist using a dark field mask, the dark field mask for defining at least one critical mask feature corresponding to the at least one critical device feature and exposing not more than one percent of each of the plurality of fields, the dark field mask exposing a first portion of the plurality of fields;
exposing the layer of photoresist using a clear field mask, the clear field mask for defining at least one remaining mask feature corresponding to the at least one remaining device feature, the clear field mask exposing a second portion of the plurality of fields different from the first portion; and
defining the critical device feature and the at least one remaining device feature after the critical mask feature and the remaining mask feature are provided;
wherein the at least one critical device feature includes at least one of a portion of a main pole, a portion of a perpendicular magnetic pole, and a portion of a shield; and
wherein the at least one remaining device feature includes at least one of at least one pad, at least one connection, and at least one test marker.
3 . The method of claim 2 wherein the plurality of fields are exposed to at least fifty millijoules per square centimeter for the step of exposing the layer of photoresist using the dark field mask and the step of exposing the layer of photoresist using the clear field mask.