Internal strobe signal generating circuit capable of selecting data rate and semiconductor apparatus including the same

1. A semiconductor apparatus comprising:

an internal strobe signal generating circuit configured to receive a data strobe signal and a complementary data strobe signal from an external device, and to generate a plurality of internal strobe signals, a number of which and a period of which vary according to operational information; and

a data arrangement circuit configured to receive a plurality of data signals, and to align the plurality of data signals to the plurality of internal strobe signals,

wherein the internal strobe signal generating circuit generates a first number of internal strobe signals having a first period when the semiconductor apparatus operates at high frequency, and generates a second number of internal strobe signals having a second period, which is shorter than the first period, when the semiconductor apparatus operates at low frequency, and the data strobe signal and the complementary data strobe signal have the second period,

wherein the internal strobe signal generating circuit comprises a data rate selection circuit configured to enable a data rate selection signal according to the operational information; a division circuit configured to generate a plurality of divided strobe signals by dividing the data strobe signal and the complementary data strobe signal in response to the data rate selection signal; and a strobe output circuit configured to generate, in response to the data rate selection signal, the plurality of internal strobe signals based on the plurality of divided strobe signals or the plurality of internal strobe signals based on the data strobe signal and the complementary data strobe signal.

2. The semiconductor apparatus of claim 1 , wherein the second period is shorter than the first period, and the second number is less than the first number.

3. The semiconductor apparatus of claim 1 , wherein the plurality of internal strobe signals generated by the internal strobe signal generating circuit is:

generated from one or more signals divided from the data strobe signal and the complementary data strobe signal when the semiconductor apparatus operates at high frequency; and

generated from the data strobe signal and the complementary data strobe signal when the semiconductor apparatus operates at low frequency.

4. The semiconductor apparatus of claim 1 , wherein the strobe output circuit provides the data strobe signal and the complementary data strobe signal as the plurality of internal strobe signals in response to the data rate selection signal disabled, and provides the plurality of divided strobe signals as the plurality of internal strobe signals in response to the data rate selection signal enabled.

5. The semiconductor apparatus of claim 4 , wherein:

the division circuit generates first to fourth divided strobe signals by dividing the data strobe signal and the complementary data strobe signal;

the strobe output circuit provides the first to fourth divided strobe signals as first to fourth internal strobe signals in response to the data rate selection signal enabled; and

the strobe output circuit provides the data strobe signal and the complementary data strobe signal as the first and third internal strobe signals while disabling the second and fourth internal strobe signals in response to the data rate selection signal disabled.

6. The semiconductor apparatus of claim 5 , wherein the data arrangement circuit generates a plurality of internal data by latching the plurality of data signals based on the first to fourth internal strobe signals.

7. The semiconductor apparatus of claim 6 , wherein the data arrangement circuit comprises:

a first data reception circuit configured to receive the plurality of data signals based on the first internal strobe signal;

a second data reception circuit configured to receive the plurality of data signals based on the second internal strobe signal;

a third data reception circuit configured to receive the plurality of data signals based on the third internal strobe signal; and

a fourth data reception circuit configured to receive the plurality of data signals based on the fourth internal strobe signal.

8. The semiconductor apparatus of claim 7 , wherein:

the second and fourth data reception circuits are deactivated in response to the data rate selection signal disabled;

the first data reception circuit receives a firstly inputted data signal of the plurality of data signals in synchronization with a first rising edge of the first internal strobe signal, and receives a thirdly inputted data signal of the plurality of data signals in synchronization with a second rising edge of the first internal strobe signal; and

the third data reception circuit receives a secondly inputted data signal of the plurality of data signals in synchronization with a first rising edge of the third internal strobe signal, and receives a fourthly inputted data signal of the plurality of data signals in synchronization with a second rising edge of the third internal strobe signal.

9. The semiconductor apparatus of claim 7 , wherein, in response to the data rate selection signal enabled:

the first data reception circuit receives a firstly inputted data signal of the plurality of data signals in synchronization with a rising edge of the first internal strobe signal;

the second data reception circuit receives a secondly inputted data signal of the plurality of data signals in synchronization with a rising edge of the second internal strobe signal;

the third data reception circuit receives a thirdly inputted data signal of the plurality of data signals in synchronization with a rising edge of the third internal strobe signal; and

the fourth data reception circuit receives a fourthly inputted data signal of the plurality of data signals in synchronization with a rising edge of the fourth internal strobe signal.