Metal oxide target and method for producing said metal oxide target
A sputtering target for the production of layers such as optical layers, the layers produced by the target, and a method for producing the target are described. In addition to Si or a combination of Si and Al, the sputtering target contains metal oxide(s), a combination of at least two metal oxides, or a combination containing at least one metal oxide in the form of an alloy or in the form of a mixture. The sputtering target has a metal oxide fraction generated by the Si and Al and the metal oxide(s) or the combination thereof. Preferably, the metal oxide in the sputtering target is a metal oxide selected from ZrO 2 , Ta 2 O 5 , Y 2 O 3 , HfO, CaO, MgO, Ce 2 O 3 , Al 2 O 3 , TiO 2 and Nb 2 O 5 .
1. A sputtering target for producing layers, wherein the sputtering target consists of (A) (i) the elements Si and Al or (ii) an Si—Al alloy and (B) (i) at least one metal oxide, (ii) at least one combination of at least two metal oxides, or (iii) a combination comprising at least one metal oxide that is an alloy or a mixture;
wherein the sputtering target has a metal oxide content ranging from 10 to 20 mol %;
wherein the sputtering target has an aluminum content ranging from 1 to 35 at %; and
wherein the at least one metal oxide is selected from ZrO 2 , Ta 2 O 5 , Y 2 O 3 , HfO, CaO, MgO, Ce 2 O 3 , TiO 2 , and Nb 2 O 5 .
2. The sputtering target of claim 1 , wherein the sputtering target has an aluminum content of 5 to 30 at %.