Semiconductor device
View Patent ↗A semiconductor device includes a semiconductor layer, an electrode layer arranged on the semiconductor layer, a crack starting point layer arranged above the semiconductor layer, and a solder layer being in contact with the electrode layer and the crack starting point layer. A joining force between the solder layer and the crack starting point layer is smaller than a joining force between the solder layer and the electrode layer.
1. A semiconductor device comprising:
a semiconductor layer;
an electrode layer arranged on and being in contact with the semiconductor layer;
a crack starting point layer arranged on and being in contact with the electrode layer so that a part of the electrode layer is sandwiched between the crack starting point layer and the semiconductor layer; and
a solder layer arranged on and being in contact with the electrode layer and the crack starting point layer;
wherein
a joining force between the solder layer and the crack starting point layer is smaller than a joining force between the solder layer and the electrode layer, and
the crack starting point layer is arranged on the electrode layer, and
a thickness of the crack starting point layer is smaller than a width of the crack starting point layer.
2. The semiconductor device according to claim 1 , wherein
the electrode layer is made of a material that forms an alloy more easily with the solder layer than the crack starting point layer.
3. The semiconductor device according to claim 1 , wherein
the crack starting point layer is made of aluminum, aluminum silicon, carbon, or polyimide resin.