Provided is a sensor device that suppresses a malfunction caused by a negative surge or a voltage drop. A sensor device includes a sensor element having an electrical characteristic varying according to a physical amount, a signal processing circuit configured to process an output signal of the sensor element, a transistor element interposed between a power source terminal and the signal processing circuit, a resistive element configured to connect a drain and a gate of the transistor element, or a collector and a base of the transistor element, and an element having threshold voltage for connecting the gate or the base of the transistor element to a GND. The element regulates current flowing from the resistive element in a direction of the GND, in a case in which supply voltage to the signal processing circuit falls below the threshold voltage.
1. A sensor device comprising:
a sensor element having an electrical characteristic varying according to a physical amount;
a signal processing circuit configured to process an output signal of the sensor element;
a transistor element interposed between a power source terminal and the signal processing circuit;
a resistive element configured to connect a gate of the transistor element or a base of the transistor element to a wire connecting the transistor element and the signal processing circuit; and
an element having threshold voltage for connecting the gate or the base of the transistor element to a GND,
wherein the element maintains electrical charge accumulated in the signal processing circuit by limiting current flowing from the resistive element in a direction of the GND and switching the transistor element off, in a case in which supply voltage to the signal processing circuit falls below the threshold voltage.
2. The sensor device according to claim 1 ,
wherein the transistor element is a first field-effect transistor, and
wherein a source of the first field-effect transistor and the power source terminal are connected, a drain of the first field-effect transistor and the signal processing circuit are connected, and a gate of the first field-effect transistor is connected to the GND via the element.
3. A sensor device comprising:
a sensor element having an electrical characteristic varying according to a physical amount;
a signal processing circuit configured to process an output signal of the sensor element;
a transistor element interposed between a power source terminal and the signal processing circuit;
a resistive element configured to connect a gate of the transistor element, or a collector and a base of the transistor element; and
an element having threshold voltage for connecting the gate or the base of the transistor element to a GND,
wherein the element regulates current flowing from the resistive element in a direction of the GND, in a case in which supply voltage to the signal processing circuit falls below the threshold voltage,
wherein the transistor element is a first field-effect transistor,
wherein a source of the first field-effect transistor and the power source terminal are connected, a drain of the first field-effect transistor and the signal processing circuit are connected, and a gate of the first field-effect transistor is connected to the GND via the element,
wherein the element is a second field-effect transistor, and
wherein a source of the second field-effect transistor and the gate of the first field-effect transistor are connected, and a drain and a gate of the second field-effect transistor and the GND are connected.
4. The sensor device according to claim 3 ,
wherein a well of the first field-effect transistor is connected to a drain of the first field-effect transistor, and a well of the second field-effect transistor is connected to the source of the second field-effect transistor.
5. The sensor device according to claim 2 ,
wherein the element is a transistor circuit including a plurality of series-connected field-effect transistors, and
wherein a source of the transistor circuit and the gate of the first transistor are connected, and a drain and a gate of the transistor circuit and the GND are connected.
6. The sensor device according to claim 2 ,
wherein the element is a PN junction diode, and
wherein an anode of the diode and the gate of the first field-effect transistor are connected, and a cathode of the diode and the GND are connected.
7. The sensor device according to claim 2 ,
wherein the element is a diode circuit including a plurality of series-connected PN junction diodes, and
wherein an anode of the diode circuit and the gate of the first field-effect transistor are connected, and a cathode of the diode circuit and the GND are connected.
8. The sensor device according to claim 1 ,
wherein the transistor element is a first PNP transistor, and
wherein an emitter of the first PNP transistor and the power source terminal are connected, a collector of the first PNP transistor and the signal processing circuit are connected, and a base of the first PNP transistor is connected to the GND via the element.
9. A sensor device comprising:
a sensor element having an electrical characteristic varying according to a physical amount;
a signal processing circuit configured to process an output signal of the sensor element;
a transistor element interposed between a power source terminal and the signal processing circuit;
a resistive element configured to connect a drain and a gate of the transistor element, or a collector and a base of the transistor element; and
an element having threshold voltage for connecting the gate or the base of the transistor element to a GND,
wherein the element regulates current flowing from the resistive element in a direction of the GND, in a case in which supply voltage to the signal processing circuit falls below the threshold voltage,
wherein the transistor element is a first PNP transistor,
wherein an emitter of the first PNP transistor and the power source terminal are connected, a collector of the first PNP transistor and the signal processing circuit are connected, and a base of the first PNP transistor is connected to the GND via the element,
wherein the element is a second PNP transistor, and
wherein an emitter of the second PNP transistor and the base of the first PNP transistor are connected, and a collector and a base of the second PNP transistor are connected to the GND.
10. The sensor device according to claim 8 ,
wherein the element is a transistor circuit including a plurality of series-connected PNP transistors, and
wherein an emitter of the transistor circuit and the base of the first PNP transistor are connected, and a collector and a base of the transistor circuit and the GND are connected.
11. The sensor device according to claim 8 ,
wherein the element is a PN junction diode, and
wherein an anode of the diode and the base of the first PNP transistor are connected, and a cathode of the diode and the GND are connected.
12. The sensor device according to claim 8 ,
wherein the element is a diode circuit including a plurality of series-connected PN junction diodes, and
wherein an anode of the diode circuit and the base of the first PNP transistor are connected, and a cathode of the diode circuit and the GND are connected.
13. The sensor device according to claim 1 ,
wherein the sensor device includes a capacitor series-connected to the signal processing circuit.
14. The sensor device according to claim 1 ,
wherein threshold voltage of the element is a voltage value equal to or larger than information stored in a memory of the processing circuit.