Separating a wafer of light emitting devices

1. A method of separating a wafer of light emitting devices disposed in rows, the method comprising:

dividing the wafer into a plurality of regions, wherein each region comprises a plurality of rows of light emitting devices and a first region has a width in a dimension that is wider than a width of a second region in that same dimension;

for each region, determining a position of a pair of first and second dicing streets, at least one pair of first and second dicing streets of the plurality of regions being not parallel;

determining, using the position of the pair of first and second dicing streets, positions of a plurality of dicing streets disposed in a sequential pattern between the first and second dicing streets; and

cutting the wafer along the plurality of dicing streets in a non-sequential pattern.

2. The method of claim 1 wherein the first region is disposed closer to a center of the wafer than the second region.

3. The method of claim 1 wherein determining a position of first and second dicing streets comprises for each of the first and second dicing streets determining a best fit line using a position of at least two fiducials on the wafer.

4. The method of claim 1 wherein the first dicing street is disposed at a first border of each region and the second dicing street is disposed at a second border of each region, wherein the second border is opposite the first border.

5. The method of claim 1 wherein determining, using the position of the first and second dicing streets, positions of a plurality of dicing streets disposed between the first and second dicing streets comprises determining Y-intercepts on a Y-axis, and slopes for the first and second dicing streets, and interpolating the positions of the plurality of dicing streets disposed between the first and second dicing streets using the Y-intercepts and the slopes of the first and second dicing streets.

6. The method of claim 1 wherein the width of each region corresponds to a width of the wafer in the region.

7. The method of claim 1 further comprising removing a growth substrate from the light emitting devices prior to dividing the wafer into a plurality of regions.

8. The method of claim 1 , wherein determining the positions of a plurality of dicing streets disposed between the first and second dicing streets includes an interpolation based on the positions of the first and second dicing streets.

9. The method of claim 1 , wherein a second dicing street of the first region corresponds to the first dicing street of the second region.

10. The method of claim 1 , wherein the plurality of dicing streets include a third street between the first and second streets, a fourth street between the third street and the second street, and a fifth street between the fourth street and the second street, and the cutting of the wafer includes cutting along the fourth street before the cutting along the third street and the cutting along the fifth street.

11. The method of claim 1 , wherein the plurality of dicing streets include a third and fourth street between the first and second streets, and the method includes adjusting an alignment of the wafer between the cutting along the third street and the cutting along the fourth street.

12. The method of claim 1 , wherein the cutting of the wafer includes a laser scribing of the wafer along the plurality of dicing streets.

13. The method of claim 1 , wherein the plurality of dicing streets include a third street between the first and second streets, and the cutting of the wafer includes laser scribing a first scribe along the third street, adjusting an alignment of the wafer based on the first scribe, and laser scribing a second scribe along the third street.

14. The method of claim 13 , wherein the second scribe is larger than the first scribe.