Light emitting semiconductor component including an absorptive layer
View Patent ↗A radiation-emitting semiconductor device includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence has an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorptive region, and the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength shorter than the peak wavelength.
1. A radiation-emitting semiconductor device comprising a semiconductor body with a semiconductor layer sequence,
wherein the semiconductor layer sequence has an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorption region,
the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength which is shorter than the peak wavelength,
the absorption region is nominally undoped, and
the semiconductor device has a first contact and a second contact that externally electrically contact the semiconductor device and the absorption region is arranged outside a current path extending through the active region between the first contact and the second contact.
2. A radiation-emitting semiconductor device comprising:
a semiconductor body with a semiconductor layer sequence having an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorption region, and the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength shorter than the peak wavelength; and
a first contact and a second contact that externally electrically contact the semiconductor device and the absorption region is arranged outside a current path extending through the active region between the first contact and the second contact.
3. The radiation-emitting semiconductor device according to claim 2 , wherein the absorption region has an absorption coefficient for radiation having the cut-off wavelength of at least 5000/cm.
4. The radiation-emitting semiconductor device according to claim 2 , wherein the cut-off wavelength is shorter than or equal to 820 nm.
5. The radiation-emitting semiconductor device according to claim 2 , wherein the absorption region has at least one layer, the doping concentration of which is at most half a level of a doping concentration of a semiconductor material arranged between the absorption region and the active region.
6. The radiation-emitting semiconductor device according to claim 2 , wherein the absorption region is nominally undoped.
7. The radiation-emitting semiconductor device according to claim 2 , wherein the absorption region has at least one cutout in which a semiconductor layer arranged between the absorption region and the active region is adjacent the first contact or the second contact.
8. The radiation-emitting semiconductor device according to claim 2 , wherein the active region contains Al x In y Ga 1−x−y As with 0≦x≦1,0≦y≦1 and x+y≦1.
9. The radiation-emitting semiconductor device according to claim 2 , wherein the absorption region contains Al x Ga 1−x As with 0.01≦x≦0.1.
10. The radiation-emitting semiconductor device according to claim 2 , wherein the absorption region contains Al x Ga 1−x As with 0.03≦x≦0.07.
11. The radiation-emitting semiconductor device according to claim 2 , wherein the absorption region has a quantum structure with at least one quantum layer.
12. The radiation-emitting semiconductor device according to claim 2 , wherein the absorption region is arranged between the active region and a radiation exit face of the semiconductor body.
13. The radiation-emitting semiconductor device according to claim 2 , wherein the semiconductor device is a thin-film semiconductor chip in which the semiconductor body is fastened by a materially bonded connection to a carrier and is remote from a growth substrate for the semiconductor layer sequence of the semiconductor body.