Switching device and electronic circuit
A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14 , a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16 ) that is interposed in a current path between the sense source terminal 4 and the source pad 13 , is separated from sense source terminal 4 , and has a predetermined size.
1. A switching device comprising:
a switching element which has a first electrode, a second electrode and a third electrode and in which on-off control is performed between the second electrode and the third electrode by applying a drive voltage between the first electrode and the second electrode in a state where a potential difference is applied between the second electrode and the third electrode;
a drive terminal electrically connected to the second electrode for applying the drive voltage;
a short-circuit capacity improving resistance that is interposed in a current path between the drive terminal and the second electrode, is disposed in a position separated from at least one of the drive terminal and the second electrode, and has a predetermined resistance value;
an output terminal for outputting a current flowing by the on control; and
a first conductive member connecting the output terminal and the second electrode, wherein
the short-circuit capacity improving resistance includes the first conductive member, and
the first conductive member includes a bonding wire stretched between the output terminal and the second electrode.
2. A switching device comprising:
a switching element that has a first electrode, a second electrode and a third electrode and in which on-off control is performed between the second electrode and the third electrode by applying a drive voltage between the first electrode and the second electrode in a state where a potential difference is applied between the second electrode and the third electrode;
a drive terminal electrically connected to the second electrode for applying the drive voltage;
a short-circuit capacity improving resistance that is interposed in a current path between the drive terminal and the second electrode, is disposed in a position separated from at least one of the drive terminal and the second electrode, and has a predetermined resistance value; and
a resin package sealing the switching element, the drive terminal and the short-circuit capacity improving resistance.
3. The switching device according to claim 1 , wherein the first electrode is a gate electrode, the second electrode is a source electrode, the third electrode is a drain electrode, and the drive terminal is a sense source terminal.
4. The switching device according to claim 1 , wherein the first electrode is a gate electrode, the second electrode is an emitter electrode, the third electrode is a collector electrode, and the drive terminal is a sense emitter terminal.
5. The switching device according to claim 1 , wherein the first electrode is a base electrode, the second electrode is an emitter electrode, the third electrode is a collector electrode, and the drive terminal is a sense emitter terminal.
6. An electronic circuit comprising:
a switching device;
an overcurrent detection circuit for detecting that an overcurrent is flowing through the switching device; and
an overcurrent protection circuit for blocking the current flowing through the switching device when an overcurrent is detected by the overcurrent detection circuit,
wherein
the switching device comprises:
a switching element that has a first electrode, a second electrode and a third electrode and in which on-off control is performed between the second electrode and the third electrode by applying a drive voltage between the first electrode and the second electrode in a state where a potential difference is applied between the second electrode and the third electrode;
a drive terminal electrically connected to the second electrode for applying the drive voltage; and
a short-circuit capacity improving resistance that is interposed in a current path between the drive terminal and the second electrode, is disposed in a position separated from at least one of the drive terminal and the second electrode, and has a predetermined resistance value.
7. A switching device comprising:
a switching element that has a first electrode, a second electrode and a third electrode and in which on-off control is performed between the second electrode and the third electrode by applying a drive voltage between the first electrode and the second electrode in a state where a potential difference is applied between the second electrode and the third electrode;
a drive terminal electrically connected to the second electrode for applying the drive voltage;
a short-circuit capacity improving resistance that is interposed in a current path between the drive terminal and the second electrode, is disposed in a position separated from at least one of the drive terminal and the second electrode, and has a predetermined resistance value;
an output terminal for outputting a current flowing by the on control; and
a first conductive member connecting the output terminal and the second electrode, wherein
the short-circuit capacity improving resistance comprises the first conductive member,
the drive terminal is connected via a second conductive member at a position separated from a connecting point of the first conductive member in the output terminal, and
the short-circuit capacity improving resistance further comprises a resistance of a portion between the connecting point of the first conductive member and a connecting point of the second conductive member in the output terminal.
8. The switching device according to claim 7 , wherein the first conductive member comprises a first bonding wire stretched between the output terminal and the second electrode, and
the second conductive member comprises a second bonding wire stretched between the output terminal and the drive terminal.
9. A switching device comprising:
a switching element that has a first electrode, a second electrode and a third electrode and in which on-off control is performed between the second electrode and the third electrode by applying a drive voltage between the first electrode and the second electrode in a state where a potential difference is applied between the second electrode and the third electrode;
a drive terminal electrically connected to the second electrode for applying the drive voltage;
a short-circuit capacity improving resistance that is interposed in a current path between the drive terminal and the second electrode, is disposed in a position separated from at least one of the drive terminal and the second electrode, and has a predetermined resistance value;
a diode element parallelly connected to the switching element; and
a third conductive member electrically connecting the second electrode of the switching element and an anode element of the diode element, wherein
the short-circuit capacity improving resistance includes the third conductive member.
10. The switching device according to claim 9 , wherein the third conductive member is a plate-shaped metal member.
11. The switching device according to claim 9 , wherein the switching element is a SiC switching element, and the diode element is a SiC diode element.
12. A semiconductor module, comprising: a plurality of switching devices that are parallelly connected, wherein
each of the switching devices is the switching device according to claim 9 .
13. The switching device according to claim 2 , wherein the first electrode is a gate electrode, the second electrode is a source electrode, the third electrode is a drain electrode, and the drive terminal is a sense source terminal.
14. The switching device according to claim 2 , wherein the first electrode is a gate electrode, the second electrode is an emitter electrode, the third electrode is a collector electrode, and the drive terminal is a sense emitter terminal.
15. The switching device according to claim 2 , wherein the first electrode is a base electrode, the second electrode is an emitter electrode, the third electrode is a collector electrode, and the drive terminal is a sense emitter terminal.