Photodetection semiconductor device having light receiving element
View Patent ↗In order to provide a photodetection semiconductor device including a light receiving element configured to reduce afterimages, a photodiode is formed by a PN junction into a circular shape so that a uniform distance from an end portion of a light receiving element to an electrode serving as a carrier outlet is realized, to thereby enable carriers to be uniformly taken out from all directions.
1. A photodetection semiconductor device including a light receiving element,
the light receiving element comprising:
a first conductivity type semiconductor substrate;
a circular second conductivity type well region formed into the first conductivity type semiconductor substrate from a surface of the first conductivity type semiconductor substrate;
a photodiode formed between the circular second conductivity type well region and the first conductivity type semiconductor substrate;
a second conductivity type semiconductor region concentrically formed inside the circular second conductivity type well region; and
an element isolation region for covering a region from around the circular second conductivity type well region to around the second conductivity type semiconductor region.
2. A photodetection semiconductor device including a light receiving element according to claim 1 , wherein the light receiving element further comprises a wiring layer for blocking light that is formed above the photodiode and has a circular opening.
3. A photodetection semiconductor device including a light receiving element according to claim 2 , wherein the wiring layer for blocking light comprises a plurality of wiring layers for blocking light.
4. A photodetection semiconductor device including a light receiving element,
the light receiving element comprising:
a first conductivity type semiconductor substrate;
a photodiode formed by a rectangular second conductivity type semiconductor region coupled to the first conductivity type semiconductor substrate;
a wiring layer for blocking light formed above the rectangular second conductivity type semiconductor region of the photodiode, and having a circular opening; and
an N-type semiconductor region and an anode electrode both formed concentrically below a center of the circular opening of the wiring layer for blocking light.