Semiconductor device including a boundary of conductivity in a substrate
View Patent ↗A device includes first and second semiconductor-regions located in a substrate which are adjacent to each other at a boundary. First contacts are located in the first semiconductor-region along the boundary and are electrically connected to the first semiconductor-region. Second contacts are located in the second semiconductor-region along the boundary and are electrically connected to the second semiconductor-region. The second contacts are not located in parts of the second semiconductor-region on an opposite side to the first contacts across the boundary. The parts of the second semiconductor-region are adjacent to the first contacts in a first direction s perpendicular to an arranging direction of the first and second contacts. The first contacts are not located in parts of the first semiconductor-region on an opposite side to the second contacts across the boundary. The parts of the first semiconductor-region are adjacent to second contacts in the first direction.
1. A semiconductor device comprising:
a semiconductor substrate;
a first semiconductor region of a first conductivity type located in the semiconductor substrate;
a second semiconductor region of a second conductivity type located in the semiconductor substrate and adjacent to the first semiconductor region at a boundary;
a plurality of first contacts located in the first semiconductor region along the boundary and electrically connected to the first semiconductor region; and
a plurality of second contacts located in the second semiconductor region along the boundary and electrically connected to the second semiconductor region, wherein
the second contacts are not located in parts of the second semiconductor region on an opposite side to the first contacts across the boundary, the parts of the second semiconductor region being adjacent to the first contacts in a first direction substantially perpendicular to an arranging direction of the first and second contacts, and
the first contacts are not located in parts of the first semiconductor region on an opposite side to the second contacts across the boundary, the parts of the first semiconductor region being adjacent to second contacts in the first direction.
2. The device of claim 1 , wherein
the boundary has a concave-convex shape, a corrugated shape, or a zigzag shape on a surface of the semiconductor substrate,
the first contacts correspond to first convex portions protruding toward the second semiconductor region at the boundary, and
the second contacts correspond to second convex portions protruding toward the first semiconductor region at the boundary.
3. The device of claim 1 , wherein the first contacts and the second contacts are provided alternately along the boundary on a surface of the semiconductor substrate.
4. The device of claim 2 , wherein the first contacts and the second contacts are provided alternately along the boundary on a surface of the semiconductor substrate.
5. The device of claim 1 , wherein at least one of the second contacts are arranged with respect to at least one of the first contacts alternately along the boundary on a surface of the semiconductor substrate.
6. The device of claim 2 , wherein at least one of the second contacts are arranged with respect to at least one of the first contacts alternately along the boundary on a surface of the semiconductor substrate.
7. The device of claim 1 , wherein
the first and second semiconductor regions are the semiconductor substrate or well diffusion layers, and
the first and second contacts are substrate bias contacts or well bias contacts are used to apply a voltage to the semiconductor substrate or the well diffusion layers.
8. The device of claim 1 , further comprising:
a first diffusion layer located in the semiconductor substrate and electrically connected to the first contacts;
a second diffusion layer located in the semiconductor substrate and electrically connected to the second contacts;
a first element formation region located in the first semiconductor region; and
a second element formation region located in the second semiconductor region, wherein
a width between the first element formation region and the second element formation region on a surface of the semiconductor substrate is smaller than a sum of a width between the first diffusion layer and the first element formation region, a width of the first diffusion layer, a width between the first diffusion layer and the second semiconductor region, a width between the second diffusion layer and the first semiconductor region, a width of the second diffusion layer, and a width between the second diffusion layer and the second element formation region.
9. The device of claim 8 , wherein the width between the first element formation region and the second element formation region on a surface of the semiconductor substrate is equal to or smaller than a sum of the width between the first diffusion layer and the first element formation region, the width of the first diffusion layer, the width between the second diffusion layer and the first semiconductor region, the width of the second diffusion layer, and the width between the second diffusion layer and the second element formation region.
10. The device of claim 2 , further comprising:
a first diffusion layer located in the semiconductor substrate and electrically connected to the first contacts;
a second diffusion layer located in the semiconductor substrate and electrically connected to the second contacts;
a first element formation region located in the first semiconductor region; and
a second element formation region located in the second semiconductor region, wherein
a width between the first element formation region and the second element formation region on a surface of the semiconductor substrate is smaller than a sum of a width between the first diffusion layer and the first element formation region, a width of the first diffusion layer, a width between the first diffusion layer and the second semiconductor region, a width between the second diffusion layer and the first semiconductor region, a width of the second diffusion layer, and a width between the second diffusion layer and the second element formation region.
11. The device of claim 10 , wherein the width between the first element formation region and the second element formation region on a surface of the semiconductor substrate is equal to or smaller than a sum of the width between the first diffusion layer and the first element formation region, the width of the first diffusion layer, the width between the second diffusion layer and the first semiconductor region, the width of the second diffusion layer, and the width between the second diffusion layer and the second element formation region.
12. The device of claim 3 , further comprising:
a first diffusion layer located in the semiconductor substrate and electrically connected to the first contacts;
a second diffusion layer located in the semiconductor substrate and electrically connected to the second contacts;
a first element formation region located in the first semiconductor region; and
a second element formation region located in the second semiconductor region, wherein
a width between the first element formation region and the second element formation region on a surface of the semiconductor substrate is smaller than a sum of a width between the first diffusion layer and the first element formation region, a width of the first diffusion layer, a width between the first diffusion layer and the second semiconductor region, a width between the second diffusion layer and the first semiconductor region, a width of the second diffusion layer, and a width between the second diffusion layer and the second element formation region.
13. The device of claim 12 , wherein the width between the first element formation region and the second element formation region on a surface of the semiconductor substrate is equal to or smaller than a sum of the width between the first diffusion layer and the first element formation region, the width of the first diffusion layer, the width between the second diffusion layer and the first semiconductor region, the width of the second diffusion layer, and the width between the second diffusion layer and the second element formation region.
14. The device of claim 1 , wherein a number of the second contacts is larger than that of the first contacts when the first conductivity type is an N-type and the second conductivity type is a P-type.
15. The device of claim 2 , wherein a number of the second contacts is larger than that of the first contacts when the first conductivity type is an N-type and the second conductivity type is a P-type.
16. The device of claim 3 , wherein a number of the second contacts is larger than that of the first contacts when the first conductivity type is an N-type and the second conductivity type is a P-type.
17. The device of claim 7 , wherein a transistor of the first conductivity type and a transistor of the second conductivity type are used as sense amplifiers of a semiconductor storage device.
18. The device of claim 1 , further comprising a wire located above the boundary.
19. The device of claim 18 , wherein the wire has a concave-convex shape, a corrugated shape, or a zigzag shape along the boundary.