Method of preparing graphene-based thin-film laminate and graphene-based thin-film laminate prepared using the same
View Patent ↗Provided are a method of preparing a graphene-based thin-film laminate and the graphene-based thin-film laminate prepared by using the method. The method may include repeating following operations 60 times or less, the cycle including: (a) to (d) processes described above, a graphene-based thin-film laminate prepared using the same, and an electrode and electronic device including the graphene-based thin-film laminate.
1. A method of preparing a graphene-based thin-film laminate, the method comprising conducting a cycle N times, the cycle comprising:
(a) contacting a surface of graphene transferred onto a substrate at room temperature with a non-metal precursor gas and activating the surface of graphene with plasma at the same time;
(b) performing a first purging on the non-metal precursor contacted and plasma-activated surface of the graphene using an inert gas;
(c) contacting the first-purged surface of the graphene with a metal precursor gas, the metal precursor gas being an aluminum precursor gas or a zinc precursor gas; and
(d) performing a second purging on the metal precursor gas contacted surface of the graphene using an inert gas,
wherein the N times consist of at least one cycle using the aluminum precursor gas in step (c) and at least one cycle using the zinc precursor gas in step (c), and the N times are 60 times or less, and
wherein a ratio of a number of cycles using the aluminum precursor gas in step (c) to a number of cycles using the zinc precursor gas in step (c) is 1:13 to 1:49.
2. The method of claim 1 , wherein the N times are 14 to 60 times.
3. The method of claim 1 , wherein the aluminum precursor gas comprises an aluminum halide, an organoaluminum compound, or a combination thereof.
4. The method of claim 1 , wherein the zinc precursor gas is an organozinc compound.
5. The method of claim 4 , wherein the organozinc compound comprises diethyl zinc.
6. The method of claim 1 , wherein in steps (a) and (c), a temperature of the surface of graphene is from about 80° C. to about 100° C. when contacting with the non-metal precursor gas or the metal precursor gas, respectively.
7. The method of claim 1 , wherein the substrate is maintained at a temperature of 100° C. or less throughout the cycle.
8. The method of claim 1 , wherein the ratio of the number of cycles using the aluminum precursor gas in step (c) to the number of cycles using the zinc precursor gas in step (c) is 1:13 to 1:19.