Semiconductor memory device
View Patent ↗A semiconductor memory device includes a plurality of memory cells, a data bus connected to a first column of the memory cells, by which data is transferred to and from the memory cells of the first column, a data latch storing data indicating whether the first column is defective or not, and a transistor having a first terminal connected to the data bus, a second terminal connected to a voltage source, and a gate connected to an output of the data latch.
1. A semiconductor memory device comprising:
a plurality of memory cells;
a data bus connected to a first column of the memory cells, by which data is transferred to and from the memory cells of the first column;
a data latch storing data indicating whether the first column is defective or not;
a transistor having a first terminal connected to the data bus, and a second terminal connected to an output of the data latch, the transistor being turned on during a test operation to store data indicating whether or not the first column is defective or not;
a plurality of sense amplifier latches connected between the first column of memory cells and the data bus; and
an operation circuit configured to compare data stored in the sense amplifier latches with expected values to determine whether or not the first column is defective or not.
2. The device according to 1 , wherein the test operation includes multiple test stages and at the conclusion of each test stage, an interim result indicating whether or not the first column is defective or not is stored in the data latch.
3. The device according to claim 1 , wherein the transistor is turned on during a write operation if the first column is a defective column to transfer data from the data latch to the data bus.
4. The device according to claim 3 ,
wherein the sense amplifier latches each store data of a first type when electrically connected to the data bus when the data bus is at a high level and of a second type when electrically connected to the data bus when the data bus at a low level.
5. The device according to claim 4 , wherein
when the data of the first type is stored in a sense amplifier latch, the memory cells connected thereto are not written, and
when the data of the second type is stored in a sense amplifier latch, the memory cells connected thereto are written.
6. The device according to claim 5 , wherein the data of the first type is 1 and the data of the second type is 0.
7. The device according to claim 3 , wherein the data stored in the data latch is 1 when the first column defective and 0 when the first column is not defective.